Quantum Anomalous Hall Effect in Hg1−y_{1-y}Mny_{y}Te Quantum Wells

The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg$_{1-y}$Mn$_{y}$Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the $Mn$ atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the $Mn$ atoms. This effect enables dissipationless charge current in spintronics devices.Comment: 5 pages, 3 figures. For high resolution figures see final published version when availabl

Theoretical Evidence for the Berry-Phase Mechanism of Anomalous Hall Transport: First-principles Studies on CuCr2_2Se4−x_{4-x}Brx_x

To justify the origin of anomalous Hall effect (AHE), it is highly desirable to have the system parameters tuned continuously. By quantitative calculations, we show that the doping dependent sign reversal in CuCr$_{2}$Se$_{4-x}$Br$_{x}$, observed but not understood, is nothing but direct evidence for the Berry-Phase mechanism of AHE. The systematic calculations well explain the experiment data for the whole doping range where the impurity scattering rates is changed by several orders with Br substitution. Further sign change is also predicted, which may be tested by future experiments.Comment: 4 page

Spin waves in the block checkerboard antiferromagnetic phase

Motivated by the discovery of new family 122 iron-based superconductors, we present the theoretical results on the ground state phase diagram, spin wave and dynamic structure factor of the extended $J_{1}-J_{2}$ Heisenberg model. In the reasonable physical parameter region of $K_{2}Fe_{4}Se_{5}$, we fi{}nd the block checkerboard antiferromagnetic order phase is stable. There are two acoustic branches and six optical branches spin wave in the block checkerboard antiferromagnetic phase, which has analytic expression in the high symmetry points. To compare the further neutron scattering experiments, we discuss the saddlepoint structure in the magnetic excitation spectrum and calculate the predicted inelastic neutron scattering pattern based on linear spin wave theory

Decentralized Estimation over Orthogonal Multiple-access Fading Channels in Wireless Sensor Networks - Optimal and Suboptimal Estimators

Optimal and suboptimal decentralized estimators in wireless sensor networks (WSNs) over orthogonal multiple-access fading channels are studied in this paper. Considering multiple-bit quantization before digital transmission, we develop maximum likelihood estimators (MLEs) with both known and unknown channel state information (CSI). When training symbols are available, we derive a MLE that is a special case of the MLE with unknown CSI. It implicitly uses the training symbols to estimate the channel coefficients and exploits the estimated CSI in an optimal way. To reduce the computational complexity, we propose suboptimal estimators. These estimators exploit both signal and data level redundant information to improve the estimation performance. The proposed MLEs reduce to traditional fusion based or diversity based estimators when communications or observations are perfect. By introducing a general message function, the proposed estimators can be applied when various analog or digital transmission schemes are used. The simulations show that the estimators using digital communications with multiple-bit quantization outperform the estimator using analog-and-forwarding transmission in fading channels. When considering the total bandwidth and energy constraints, the MLE using multiple-bit quantization is superior to that using binary quantization at medium and high observation signal-to-noise ratio levels

Model Hamiltonian for Topological Insulators

In this paper we give the full microscopic derivation of the model Hamiltonian for the three dimensional topological insulators in the $Bi_2Se_3$ family of materials ($Bi_2Se_3$, $Bi_2Te_3$ and $Sb_2Te_3$). We first give a physical picture to understand the electronic structure by analyzing atomic orbitals and applying symmetry principles. Subsequently, we give the full microscopic derivation of the model Hamiltonian introduced by Zhang {\it et al} [\onlinecite{zhang2009}] based both on symmetry principles and the ${\bf k}\cdot{\bf p}$ perturbation theory. Two different types of $k^3$ terms, which break the in-plane full rotation symmetry down to three fold rotation symmetry, are taken into account. Effective Hamiltonian is derived for the topological surface states. Both the bulk and the surface models are investigated in the presence of an external magnetic field, and the associated Landau level structure is presented. For more quantitative fitting to the first principle calculations, we also present a new model Hamiltonian including eight energy bands.Comment: 18 pages, 9 figures, 5 table

Comparative study on the thermoelectric effect of parent oxypnictides LaTTAsO (TT = Fe, Ni)

The thermopower and Nernst effect were investigated for undoped parent compounds LaFeAsO and LaNiAsO. Both thermopower and Nernst signal in iron-based LaFeAsO are significantly larger than those in nickel-based LaNiAsO. Furthermore, abrupt changes in both thermopower and Nernst effect are observed below the structural phase transition temperature and spin-density wave (SDW) type antiferromagnetic (AFM) order temperature in Fe-based LaFeAsO. On the other hand, Nernst effect is very small in the Ni-based LaNiAsO and it is weakly temperature-dependent, reminiscent of the case in normal metals. We suggest that the effect of SDW order on the spin scattering rate should play an important role in the anomalous temperature dependence of Hall effect and Nernst effect in LaFeAsO. The contrast behavior between the LaFeAsO and LaNiAsO systems implies that the LaFeAsO system is fundamentally different from the LaNiAsO system and this may provide clues to the mechanism of high $T_c$ superconductivity in the Fe-based systems.Comment: 6 pages, 6 figure

Doping and Irradiation Controlled Vortex Pinning Behavior in BaFe2(As1-xPx)2 Single Crystals

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.Comment: 4 pages, 4 figures,significant change of eraly version, accepted by PRB rapid communication

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired band-gap in the visible frequency range. The monolayers feature a valence band spin splitting with opposite sign in the two valleys located at corners of 1st Brillouin zone. This spin-valley coupling, particularly pronounced in tungsten dichalcogenides, can benefit potential spintronics and valleytronics with the important consequences of spin-valley interplay and the suppression of spin and valley relaxations. Here we report the first optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at mutilayers to a direct-gap one at monolayers. The PL spectra and first-principle calculations consistently reveal a spin-valley coupling of 0.4 eV which suppresses interlayer hopping and manifests as a thickness independent splitting pattern at valence band edge near K points. This giant spin-valley coupling, together with the valley dependent physical properties, may lead to rich possibilities for manipulating spin and valley degrees of freedom in these atomically thin 2D materials