Andreev Edge State on Semi-Infinite Triangular Lattice: Detecting the Pairing Symmetry in Na_0.35CoO_2.yH_2O

We study the Andreev edge state on the semi-infinite triangular lattice with different pairing symmetries and boundary topologies. We find a rich phase diagram of zero energy Andreev edge states that is a unique fingerprint of each of the possible pairing symmetries. We propose to pin down the pairing symmetry in recently discovered Na_xCoO_2 material by the Fourier-transformed scanning tunneling spectroscopy for the edge state. A surprisingly rich phase diagram is found and explained by a general gauge argument and mapping to 1D tight-binding model. Extensions of this work are discussed at the end.Comment: 4 pages, 1 table, 4 figure

On non hadronic origin of high energy neutrinos

Some of the non hadronic interactions, such as the \eta resonance formation in the \gamma \gamma interactions and the muon pair production in the e\gamma interactions, are identified as possible source interactions for generating high energy neutrinos in the cosmos.Comment: 9 pages, 1 figure, talk given at First NCTS Workshop on Astroparticle Physics, 6-9 December, 2001, Kenting, Taiwan (to appear in its proceedings edited by H. Athar, Guey-Lin Lin, and K.-W. Ng

Silicon contact for area reduction of integrated circuits

Silicon contact for area reduction of integrated circuit

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold