Measurements of the mean energy-loss of swift heavy ions in carbon with high precision

Z(I) dependent effects in heavy ion stopping around stopping maximum under conditions of equilibrium charge have been measured with a time of flight-energy elastic recoil detection analysis (ToF-E ERDA) set-up. The ToF section was used to tag individual r</p

Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si

The approach to quasi equilibrium sputtering of transition elements Co, Er. V and Ni during high-fluence implantation of Si(1 1 1) using a metal vapour vacuum are (MEVVA) source has been studied by time of flight-energy elastic recoil detection analysis (</p

Characterisation of compact discs using time of flight-energy elastic recoil detection analysis

The challenge of meeting the ever increasing demands for low-cost information storage media with greater information storage density and rapid access has prompted development of sophisticated optical technologies, e.g., compact disc (CD) and digital video</p

Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures

Si3N4/Si(1 0 0),SiO2/Si(1 0 0) and SiO2/Si(1 1 1) wafers were implanted by keV Co ions under technical conditions to form thin silicide surface films. A metal vapour vacuum are (MEVVA) source was employed to produce a high fluence of Co ions that was just</p

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development

The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1 x 10(16)-2.6 x 10(18) ions cm(-2)) keV Co metal vapour vacuum are (MEVVA) irradiation has been investigated by scanning electron mi</p

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium

The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Are (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling.</p