Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

The displacement damage hardness that can be achieved using p-channel charge-coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 protons cm-2. The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV / krad, determined by the reduction in full well capacity

C3TM: CEI CCD charge transfer model for radiation damage analysis and testing

Radiation induced defects in the silicon lattice of Charge Couple Devices (CCDs) are able to trap electrons during read out and thus create a smearing effect that is detrimental to the scientific data. To further our understanding of the positions and properties of individual radiation-induced traps and how they affect space- borne CCD performance, we have created the Centre for Electronic Imaging (CEI) CCD Charge Transfer Model (C3TM). This model simulates the physical processes taking place when transferring signal through a radiation damaged CCD. C3TM is a Monte Carlo model based on Shockley-Read-Hall theory, and it mimics the physical properties in the CCD as closely as possible. It runs on a sub-electrode level taking device specific charge density simulations made with professional TCAD software as direct input. Each trap can be specified with 3D positional information, emission time constant and other physical properties. The model is therefore also able to simulate multi-level clocking and other complex clocking schemes, such as trap pumping

Importance of charge capture in interphase regions during readout of charge-coupled devices

The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

Modelling Adverse Selection on Electronic Order-Driven Markets

The vast majority of models that decompose the bid/ask spread assume the quote-driven, specialist structure of the NYSE. This paper critically evaluates these models to construct a model specific for an electronic order-driven exchange. The model not only captures adverse selection and the impact of order flows on price discovery but it includes the imbalance of supply and demand inherent in the public limit order book. With this new model we investigate the change to anonymity on the Australian Securities Exchange (ASX). Following the change to anonymity, both adverse selection and the demand/supply imbalance have an increased impact on prices while order flow has a decreased influence, suggesting the change to anonymity has improved market efficiency. The model also uncovers a change in traders’ behavior once their fear of front-running is reduced. We show that the model is stable and robust across high liquidity stocks as well as stocks with as few as 5 trades per day.bid-ask spread models; adverse selection; anonymity

Comment on 'Non-equilibrium thermodynamics of light absorption'

A recent paper by Meszéna and Westerhoff (1999 J. Phys. A: Math. Gen. 32 301) has aimed to address what is referred to as a principal question of biological thermodynamics, the possibility of describing photosynthesis in terms of non-equilibrium thermodynamics. The issue is associated with a misrepresentation of the fundamental photophysics involved, and as a result the analysis is invalid

Anomalous Hall Effect in three ferromagnets: EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30

The Hall resistivity (Rho_xy), resistivity (Rho_xx), and magnetization of three metallic ferromagnets are investigated as a function of magnetic field and temperature. The three ferromagnets, EuFe4Sb12 (Tc = 84 K), Yb14MnSb11 (Tc = 53 K), and Eu8Ga16Ge30 (Tc = 36 K) are Zintl compounds with carrier concentrations between 1 x 10^21 cm^-3 and 3.5 x 10^21 cm^-3. The relative decrease in Rho_xx below Tc [Rho_xx(Tc)/Rho_xx(2 K)] is 28, 6.5, and 1.3 for EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30 respectively. The low carrier concentrations coupled with low magnetic anisotropies allow a relatively clean separation between the anomalous (Rho_'xy), and normal contributions to the measured Hall resistivity. For each compound the anomalous contribution in the zero field limit is fit to alpha Rho_xx + sigma_xy rho_xx^2 for temperatures T < Tc. The anomalous Hall conductivity, sigma_xy, is -220 +- 5 (Ohm^-1 cm^-1), -14.7 +- 1 (Ohm^-1 cm^-1), and 28 +- 3 (Ohm^-1 cm^-1) for EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30 respectively and is independent of temperature for T < Tc if the change in spontaneous magnetization (order parameter) with temperature is taken into account. These data are consistent with recent theories of the anomalous Hall effect that suggest that even for stochiometric ferromagnetic crystals, such as those studied in this article, the intrinsic Hall conductivity is finite at T = 0, and is a ground state property that can be calculated from the electronic structure.Comment: 22 pages, 13 figures Submitted to PR

Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing

Access, quality and equity in early childhood education and care: A South Australian study

Australian Journal of Education, 59/2, May/2015 published by SAGE Publishing, All rights reservedWhile much is known about the factors related to student performance beyond Grade 3 less is known about the factors that are related to student performance in early childhood education and the early years in primary school. As part of the 'I go to school' project in South Australia, this study tracked children attending integrated preschool/childcare centres -known as Children's Centres- as they made their transition to school. Results indicated that children who attended early childhood education programs that were of higher quality as characterised by higher staff qualifications and a greater range and more engaging children's activities showed a greater gain in cognitive development than children who attended lower quality programs. Findings also suggested that children who benefited the most from attendance in these programs were children from backgrounds of greater social disadvantage than children from less disadvantaged backgrounds

Coherent Cancellation of Photothermal Noise in GaAs/Al0.92_{0.92}Ga0.08_{0.08}As Bragg Mirrors

Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.Comment: 10 pages, 7 figure