Cyclotron motion and magnetic focusing in semiconductor quantum wells with spin-orbit coupling

We investigate the ballistic motion of electrons in III-V semiconductor quantum wells with Rashba spin-orbit coupling in a perpendicular magnetic field. Taking into account the full quantum dynamics of the problem, we explore the modifications of classical cyclotron orbits due to spin-orbit interaction. As a result, for electron energies comparable with the cyclotron energy the dynamics are particularly rich and not adequately described by semiclassical approximations. Our study is complementary to previous semiclassical approaches concentrating on the regime of weaker fields.Comment: 14 pages, 8 figures included, version to appear in Phys. Rev.

Atomic layer deposition of titanium nitride for quantum circuits

Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.4 to 1.0 million and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kOhm, with no significant degradation of the internal quality factor as the impedance increases. These high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ohm resonator, transformative for hybrid quantum systems and quantum sensing.Comment: 10 pages, 8 figures including supplemental material

Optimization of charge carrier extraction in colloidal quantum dots short-wave infrared photodiodes through optical engineering

Colloidal quantum dots (QDs) have attracted scientific interest for infrared (IR) optoelectronic devices due to their bandgap tunability and the ease of fabrication on arbitrary substrates. In this work, short-wave IR photodetectors based on lead sulfide (PbS) QDs with high detectivity and low dark current is demonstrated. Using a combination of time-resolved photoluminescence, carrier transport, and capacitance-voltage measurements, it is proved that the charge carrier diffusion length in the QD layer is negligible such that only photogenerated charges in the space charge region can be collected. To maximize the carrier extraction, an optical model for PbS QD-based photodiodes is developed, and through optical engineering, the cavity at the wavelength of choice is optimized. This universal optimization recipe is applied to detectors sensitive to wavelengths above 1.4 mu m, leading to external quantum efficiency of 30% and specific detectivity (D*) in the range of 10(12) Jones

Thin-film quantum dot photodiode for monolithic infrared image sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10(-6) A/cm(2) at 2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating \textit{before} it is fully spin polarized. The minority-spin population at the transition is ~8*10^{9} cm^{-2}, close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.Comment: 4 pages with figure

Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs

We studied low temperature (T=50mK) in-plane magnetoresistance of a dilute two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an apparent metal-insulator transition. We found an anisotropic magnetoresistance, which changes dramatically at high in-plane fields (B_{\parallel}\agt5T) as the hole density is varied. At high densities where the system behaves metallic at $B_{\parallel}=0$, the transverse magnetoresistance is larger than the longitudinal magnetoresistance. With decreasing the hole density the difference becomes progressively smaller, and at densities near the "critical" density and lower, the longitudinal magnetoresistance becomes larger than the transverse magnetoresistance

Transition to Long Range Magnetic Order in the Highly Frustrated Insulating Pyrochlore Antiferromagnet Gd_2Ti_2O_7

Experimental evidence from measurements of the a.c. and d.c. susceptibility, and heat capacity data show that the pyrochlore structure oxide, Gd_2Ti_2O_7, exhibits short range order that starts developing at 30K, as well as long range magnetic order at $T\sim 1$K. The Curie-Weiss temperature, $\theta_{CW}$ = -9.6K, is largely due to exchange interactions. Deviations from the Curie-Weiss law occur below $\sim$10K while magnetic heat capacity contributions are found at temperatures above 20K. A sharp maximum in the heat capacity at $T_c=0.97$K signals a transition to a long range ordered state, with the magnetic specific accounting for only $\sim$ 50% of the magnetic entropy. The heat capacity above the phase transition can be modeled by assuming that a distribution of random fields acts on the $^8S_{7/2}$ ground state for Gd$^{3+}$. There is no frequency dependence to the a.c. susceptibility in either the short range or long range ordered regimes, hence suggesting the absence of any spin-glassy behavior. Mean field theoretical calculations show that no long range ordered ground state exists for the conditions of nearest-neighbor antiferromagnetic exchange and long range dipolar couplings. At the mean-field level, long range order at various commensurate or incommensurate wave vectors is found only upon inclusion of exchange interactions beyond nearest-neighbor exchange and dipolar coupling. The properties of Gd$_2Ti_2O_7 are compared with other geometrically frustrated antiferromagnets such as the Gd_3Ga_5O_{12} gadolinium gallium garnet, RE_2Ti_2O_7 pyrochlores where RE = Tb, Ho and Tm, and Heisenberg-type pyrochlore such as Y_2Mo_2O_7, Tb_2Mo_2O_7, and spinels such as ZnFe_2O_4Comment: Letter, 6 POSTSCRIPT figures included. (NOTE: Figure 5 is not included --) To appear in Physical Review B. Contact: [email protected]

Metal oxide semiconductor thin-film transistors for flexible electronics

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided