Thermal Conductivity of Single Wall Carbon Nanotubes: Diameter and Annealing Dependence

The thermal conductivity, k(T), of bulk single-wall carbon nanotubes (SWNT's) displays a linear temperature dependence at low T that has been attributed to 1D quantization of phonons. To explore this issue further, we have measured the k(T) of samples with varying average tube diameters. We observe linear k(T) up to higher temperatures in samples with smaller diameters, in agreement with a quantization picture. In addition, we have examined the effect of annealing on k(T). We observe an enhancement in k(T) for annealed samples which we attribute to healing of defects and removal of impurities. These measurements demonstrate how the thermal properties of an SWNT material can be controlled by manipulating its intrinsic nanoscale properties.Comment: Proc. of the XV. Int. Winterschool on Electronic Properties of Novel Materials, Kirchberg/Tirol, Austria, 200

Backlund transformations and Hamiltonian flows

In this work we show that, under certain conditions, parametric Backlund transformations (BTs) for a finite dimensional integrable system can be interpreted as solutions to the equations of motion defined by an associated non-autonomous Hamiltonian. The two systems share the same constants of motion. This observation lead to the identification of the Hamiltonian interpolating the iteration of the discrete map defined by the transformations, that indeed will be a linear combination of the integrals appearing in the spectral curve of the Lax matrix. An application to the Toda periodic lattice is given.Comment: 19 pages, 2 figures. to appear in J. Phys.

Chemical doping of individual semiconducting carbon-nanotube ropes

We report the effects of potassium doping on the conductance of individual semiconducting single-walled carbon nanotube ropes. We are able to control the level of doping by reversibly intercalating and de-intercalating potassium. Potassium doping changes the carriers in the ropes from holes to electrons. Typical values for the carrier density are found to be ∼100–1000 electrons/μm. The effective mobility for the electrons is μeff∼20–60 cm2 V-1 s-1, a value similar to that reported for the hole effective mobility in nanotubes [R. Martel et al., Appl. Phys. Lett. 73, 2447 (1998)]

Backlund transformations for many-body systems related to KdV

We present Backlund transformations (BTs) with parameter for certain classical integrable n-body systems, namely the many-body generalised Henon-Heiles, Garnier and Neumann systems. Our construction makes use of the fact that all these systems may be obtained as particular reductions (stationary or restricted flows) of the KdV hierarchy; alternatively they may be considered as examples of the reduced sl(2) Gaudin magnet. The BTs provide exact time-discretizations of the original (continuous) systems, preserving the Lax matrix and hence all integrals of motion, and satisfy the spectrality property with respect to the Backlund parameter.Comment: LaTeX2e, 8 page

The model equation of soliton theory

We consider an hierarchy of integrable 1+2-dimensional equations related to Lie algebra of the vector fields on the line. The solutions in quadratures are constructed depending on $n$ arbitrary functions of one argument. The most interesting result is the simple equation for the generating function of the hierarchy which defines the dynamics for the negative times and also has applications to the second order spectral problems. A rather general theory of integrable 1+1-dimensional equations can be developed by study of polynomial solutions of this equation under condition of regularity of the corresponding potentials.Comment: 17

Excitons and high-order optical transitions in individual carbon nanotubes

We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems