2,304 research outputs found

    Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points

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    We have investigated the magnetoresistive behavior of Dirac semi-metal Cd3As2 down to low temperatures and in high magnetic fields. A positive and linear magnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14 T, on high-quality single crystals of Cd3As2 with ultra-low electron density and large Lande g factor. Such a large LMR occurs when the magnetic field is applied perpendicular to both the current and the (100) surface, and when the temperature is low such that the thermal energy is smaller than the Zeeman splitting energy. Tilting the magnetic field or raising the temperature all degrade the LMR, leading to a less pronounced quadratic behavior. We propose that the phenomenon of LMR is related to the peculiar field-induced shifting/distortion of the helical electrons' Fermi surfaces in momentum space.Comment: 5 pages, 4 figure

    Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal

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    We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs2 semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2-300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs2. The quadratic MR can even exceed 1,200,000% at B = 9 T and T = 2 K, which is one of the largest values among those of all known semi-metallic compounds including the very recently discovered WTe2 and NbSb2. The giant positive magnetoresistance in TaAs2, which not only has a fundamentally different origin from the negative colossal MR observed in magnetic systems, but also provides a nice complemental system that will be beneficial for applications in magnetoelectronic devicesComment: 13 pages, 4 figures, Accepted by Appl. Phys. Lett. (Submitted the paper on Nov. 22, 2015
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