Improved photovoltaic devices, using transparent contacts

Transparent conducting coating is applied to narrow pn junction surface to provide ohmic contact for majority carrier flow. Coating can be made thick to prevent series resistance problem

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures, phase 2

Crystal growth procedures, fabrication techniques, and theoretical analysis were developed in order to make GaAlAs-GaAs solar cell structures which exhibit high performance at air mass 0 illumination and high temperature conditions

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures, phase 3

The etch-back epitaxy process is described for producing thin, graded composition GaAlAs layers. The palladium-aluminum contact system is discussed along with its associated problems. Recent solar cell results under simulated air mass zero light and at elevated temperatures are reported and the growth of thin polycrystalline GaAs films on foreign substrates is developed

The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1

The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn doped pGaAs region, and a Zn doped Ga(1-x)Al(x)As layer, (2) one consisting of an nGaAs substrate, a Ge doped pGaAs region, and a pGa(1-x)Al(x)As upper layer, and (3) one consisting of an n+GaAs substrate, an nGa(1-x)Al(X)As region, a pGa(1-x)Bl(X) As region, and a pGa(1-y)Al(y)As upper layer. In all three cases, the upper alloy layer is thin and of high Al composition in order to obtain high spectral response over the widest possible range of photon energies. Spectral response, capacitance-voltage, current-voltage, diffusion length, sunlight (or the equivalent)-efficiency, and efficiency-temperature measurements were made as a function of device parameters in order to analyze and optimize the solar cell behavior

Optimization of solar cells for air mass zero operation and study of solar cells at high temperatures, phase 4

The Pd contact to GaAs was studied using backscattering, Auger analysis, and sheet resistance measurements. Several metallurgical phases were present at low temperatures, but PdGa was the dominant phase in samples annealed at 500 C. Ti/Pd/Ag contacts appeared to have the lowest contact resistance. Etchback epitaxy (EBE) was compared to saturated melt epitaxy (SME) method of growing liquid phase epitaxial layers. The SME method resulted in a lower density of Ga microdroplets in the grown layer, although the best solar cells were made by the EBE method. Photoluminescence was developed as a tool for contactless analysis of GaAs cells. Efficiencies of over 8 percent were measured at 250 C

Semiconductor structure

A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt

Thermoelectrical Field Effects in Low Dimensional Structure Solar Cells

Taking into account the temperature gradients in solar cells, it is shown that their efficiency can be increased beyond the Shockley-Queisser limit (J. Appl. Phys. 32 (1961) 510). The driving force for this gain is the temperature gradient between this region and its surroundings. A quantitative theory is given. Though the effect is found to be weak in conventional solar cells, it is argued that it can be substantially increased by proper choice of materials and design of the device. In particular, it is shown that the insertion of a quantum well can enhance the efficiency beyond one of the single gap cell, due to the presence of temperature jumps at the heterojunctions.Comment: Published in Special issue Physica E 14 (1-2) on Nanostructures in Photovoltaic

Crime, Income Inequality, and Density at the Neighborhood Level

An economic model of crime gives policymakers a basis to understand how income inequality and population density relate to crime at the neighborhood level. This study reveals a negative and significant relationship between population density in Census tracts and both property and violent crime rates. It finds ambiguous results that vary by city for income inequality. This cross-sectional analysis of Census tracts in Chicago, Los Angeles, Houston, and Dallas uses crime and demographic data from the National Neighborhood Crime Study. This study also yields interesting results about the importance of residential stability for crime prevention and comments on possible urban design tools for crime reduction