Temperature sensitivity of 1.55μm (100) InAs/InP-based quantum dot lasers

Semiconductor lasers with quantum dot (QD) based active regions have generated a huge amount of interest for applications including communications networks due to their anticipated superior physical properties due to three dimensional carrier confinement. For example, the threshold current of ideal quantum dots is predicted to be temperature insensitive. We have investigated the operating characteristics of 1.55 μm InAs/InP (100) quantum dot lasers focusing on their carrier recombination characteristics using a combination of low temperature and high pressure measurements. By measuring the intrinsic spontaneous emission from a window fabricated in the n-contact of the devices we have measured the radiative component of the threshold current density, Jrad. We find that Jrad is itself relatively temperature insensitive (Fig. 1). However, the total threshold current density, Jth, increases significantly with temperature leading to a characteristic temperature T0~72 K around 220 K-290 K. From this data it is clear that the devices are dominated by a non-radiative recombination process which accounts for up to 94% of the threshold current at room temperature (Fig. 1)

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi.

A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk GaAsBi is presented using power and temperature dependent photoluminescence spectroscopy. The observation of a characteristic red-blue-red shift in the peak luminescence energy indicates the presence of short-range alloy disorder in the material. A decrease in the carrier localisation energy demonstrates the strong excitation power dependence of localised state behaviour and is attributed to the filling of energy states furthest from the valence band edge. Analysis of the photoluminescence lineshape at low temperature presents strong evidence for a Gaussian distribution of localised states that extends from the valence band edge. Furthermore, a rate model is employed to understand the non-uniform thermal quenching of the photoluminescence and indicates the presence of two Gaussian-like distributions making up the density of localised states. These components are attributed to the presence of microscopic fluctuations in Bi content, due to short-range alloy disorder across the GaAsBi layer, and the formation of Bi related point defects, resulting from low temperature growth

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

Deep-level defects in n-type GaAs1-x Bi x having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been studied by contactless electroreflectance and photoluminescence. We find that incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap concentration in dilute GaAsBi layers by over two orders of magnitude compared to GaAs grown under the same conditions. In order to distinguish between Bi- and host-related traps and to identify their possible origin, we used the GaAsBi band gap diagram to correlate their activation energies in samples with different Bi contents. This approach was recently successfully applied for the identification of electron traps in n-type GaAs1-x N x and assumes that the activation energy of electron traps decreases with the Bi (or N)-related downward shift of the conduction band. On the basis of this diagram and under the support of recent theoretical calculations, at least two Bi-related traps were revealed and associated with Bi pair defects, i.e. (VGa+BiGa)(-/2-) and (AsGa+BiGa)(0/1-). In the present work it is shown that these defects also influence the photoluminescence properties of GaAsBi alloys

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature

Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers

We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge-emitting lasers operating near 1.3 μm. Below ∼100 K, the threshold current, Ith, is dominated by the radiative current, I rad, and is proportional to temperature, T. However, above 100 K, non-radiative recombination increases abruptly such that by 125 K it accounts for 40% of Ith. From high pressure measurements at this temperature, we find that the non-radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non-radiative recombination accounts for ∼90% Ith and gives rise to a super-linear temperature dependence of Ith, in spite of the fact that I rad ∝ T. At room temperature the non-radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γ-minimum of the GaAs barriers and possibly also into the X-minima of the GaAsP confining layers

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy so, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which so,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment

Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

We investigated the ground-state (GS) modulation characteristics of 1.3 μm InAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. The choice of annealing conditions was determined from our recently reported results. With reference to the as-grown QD lasers, one obtains approximately 18% improvement in the modulation bandwidth from the annealed QD lasers. In addition, the modulation efficiency of the annealed QD lasers improves by approximately 45% as compared to the as-grown ones. The observed improvements are due to (1) the removal of defects which act as nonradiative recombination centers in the QD structure and (2) the reduction in the Auger-related recombination processes upon annealing

Effect of Internet-Based Cognitive Behavioral Humanistic and Interpersonal Training vs Internet-Based General Health Education on Adolescent Depression in Primary Care

Importance: Although 13% to 20% of American adolescents experience a depressive episode annually, no scalable primary care model for adolescent depression prevention is currently available. Objective: To study whether competent adulthood transition with cognitive behavioral humanistic and interpersonal training (CATCH-IT) lowers the hazard for depression in at-risk adolescents identified in primary care, as compared with a general health education (HE) attention control. Design, Setting, and Participants: This multicenter, randomized clinical trial, a phase 3 single-blind study, compares CATCH-IT with HE. Participants were enrolled from 2012 to 2016 and assessed at 2, 6, 12, 18, and 24 months postrandomization in a primary care setting. Eligible adolescents were aged 13 to 18 years with subsyndromal depression and/or history of depression and no current depression diagnosis or treatment. Of 2250 adolescents screened for eligibility, 446 participants completed the baseline interview, and 369 were randomized into CATCH-IT (n = 193) and HE (n = 176). Interventions: The internet-based intervention, CATCH-IT, is a 20-module (15 adolescent modules and 5 parent modules) online psychoeducation course that includes a parent program, supported by 3 motivational interviews. Main Outcomes and Measures: Time to event for depressive episode; depressive symptoms at 6 months. Results: Of 369 participants (mean [SD] age, 15.4 [1.5] years; 251 women [68%]) included in this trial, 193 were randomized into CATCH-IT and 176 into HE. Among these participants, 28% had both a past episode and subsyndromal depression; 12% had a past episode only, 59% had subsyndromal depression only, and 1% had borderline subsyndromal depression. The outcome of time to event favored CATCH-IT but was not significant with intention-to-treat analyses (unadjusted hazard ratio [HR], 0.59; 95% CI, 0.27-1.29; P = .18; adjusted HR, 0.53; 95% CI, 0.23-1.23; P = .14). Adolescents with higher baseline Center for Epidemiologic Studies Depression scale (CES-D ) scores showed a significantly stronger effect of CATCH-IT on time to event relative to those with lower baseline scores (HR 0.82; 95% CI, 0.67-0.99; P = .04). For example, the hazard ratio for a CES-D score of 15 was 0.20 (95% CI, 0.05-0.77), compared with a hazard ratio of 1.44 (95% CI, 0.41-5.03) for a CES-D score of 5. In both CATCH-IT and HE groups, depression symptoms declined and functional scores increased. Conclusions and Relevance: For preventing depressive episodes CATCH-IT may be better than HE for at-risk adolescents with subsyndromal depression. Also CATCH-IT may be a scalable approach to prevent depressive episodes in adolescents in primary care