KRITIK TERHADAP ORIENTALISME:STUDI KOMPARATIF PEMIKIRAN EDWARD SAID & MUSTHOFA AL A’ZAMI

Sejarah orientalisme pada masa-masa pertama adalah pertarungan antara dunia Barat Nasrani abad pertengahan dengan dunia Timur Islam, baik dalam keagamaan maupun ideologi. Orientalisme merupakan sebuah bentuk eksplorasi dunia timur yang dilakukan oleh Barat. Tidak hanya pada karya ilmiah, melainkan kepada beragam corak seni, sastra, maupun hasil tulisan –tulisan penelitian yang dilakukan oleh orang barat Musthafa A`zami dan Edward Said merupakan dua tokoh dengan sisi ideologis atau keyakinan yang berbeda, dan sama-sama melakukan kajian tentang studi orientalisme yang berkembang di Barat. Fokus penelitian akan ditujukan dengan melihat ciri khas pemikiran masing-masing pemikir, keterkaitan antara keduanya, persamaan beberapa hal, serta beberapa perbedaan-perbedaan antara keduanya. Dengan membandingkan corak pemikiran Edward Said dan A’zhami, maka permasalahan yang akan diteliti adalah, pertama ; pendekatan apa yang dilakukan oleh Edward Said dan A’zhami dalam melakukan kritik terhadap Orientalisme?,kedua; apa persamaan dan perbedaan keduanya dalam melakukan kritik terhadap Orientalisme? Penelitian ini bertujuan,pertama; mendeskripsikan berbagai pendekatan yang digunakan oleh Edward Said dan A’zhami dalam melakukan kritik terhadap Orientalisme,kedua; mendeskripsikan kekhasan pemikiran Edward Said dan A’zhami, serta persamaan dan perbedaan antara keduanya. Sedangkan jenis penelitian ini adalah penelitian kualitatif dengan metode library research. Untuk sumber data dalam penelitian ini adalah buku-buku yang ditulis oleh Edward Said dan Mushtofa Al A’zami. Diantara buku-buku yang ditulis oleh keduanya, buku yang akan dijadikan sebagai rujukan Primer adalah buku Karya Edward Said, Orientalisme (terj) dan buku Musthofa Al A’zami yang berjudul The History of Qur’anic Text (terj). Adapun metode pengolahan data yang digunakan dalam penelitian ini adalah deskriptif dan analisa. Dalam penelitian ini penulis menyimpulkan ,pertama; A’zami mengkritik orientalisme dengan pendekatan validasi sanad ,baik Alqur’an maupun hadits sedangkan Said mengkritik orientalis dengan pendekatan teori dari para filsuf post-modernisme serta dengan pendekatan kritik history , kedua; persamaan keduanya adalah mempunyai persepsi yang sama tentang perasaan unggul barat atas Timur dan perbedaan keduanya adalah A’zami melakukan rekonstruksi berdasarkan faktor emosi keagamaan, sedangkan Said melakukan rekonstruksi dalam kaitannya dengan hegemoni Barat terhadap dunia Timur

GSK3-mediated raptor phosphorylation supports amino acid-dependent Q2 mTORC1-directed signalling

The mammalian or mechanistic target of rapamycin (mTOR) complex 1 (mTORC1) is a ubiquitously expressed multimeric protein kinase complex that integrates nutrient and growth factor signals for the co-ordinated regulation of cellular metabolism and cell growth. Herein, we demonstrate that suppressing the cellular activity of glycogen synthase kinase-3 (GSK3), by use of pharmacological inhibitors or shRNA-mediated gene silencing, results in substantial reduction in amino acid (AA)-regulated mTORC1-directed signalling, as assessed by phosphorylation of multiple downstream mTORC1 targets. We show that GSK3 regulates mTORC1 activity through its ability to phosphorylate the mTOR-associated scaffold protein raptor (regulatory-associated protein of mTOR) on Ser(859). We further demonstrate that either GSK3 inhibition or expression of a S859A mutated raptor leads to reduced interaction between mTOR and raptor and under these circumstances, irrespective of AA availability, there is a consequential loss in phosphorylation of mTOR substrates, such as p70S6K1 (ribosomal S6 kinase 1) and uncoordinated-51-like kinase (ULK1), which results in increased autophagic flux and reduced cellular proliferation

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

Porous SiC (PSiC) substrates were used for the growth of GaN by reactive molecular-beam epitaxy with ammonia as the nitrogen source. Improved quality of GaNfilms has been demonstrated for growth on PSiC substrates, as compared to that on standard 6H–SiC substrates. Cross-sectional transmission electron microscopy and electron diffraction showed a reduction in dislocation density and a higher degree of lattice and thermal relaxation in the GaNfilmsgrown on porous substrates. The submicron GaNfilms exhibit a rocking curve linewidth of 3.3 arcmin for (0002) diffraction and 13.7 arcmin for (101̄2) diffraction. Low-temperature photoluminescence showed an excitonic transition with a full width at half maximum of 9.5 meV at 15 K, as well as high quantum efficiency, on the GaN layer grown on PSiC when the thin skin layer on porous SiC was removed before growth

Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Significant improvement of structural and optical qualities of GaNthin films on sapphire substrates was achieved by metal organic chemical vapor deposition with in situ SiNxnanonetwork. Transmission electron microscope (TEM) studies revealed that screw- and edge-type dislocations were reduced to 4.4×107 and 1.7×107cm−2, respectively, for a ∼5.5-μm-thick layer. Furthermore, room temperature carrier lifetimes of 2.22 and 2.49ns were measured by time-resolved photoluminescence(TRPL) for samples containing single and double SiNx network layers, respectively, representing a significant improvement over the previous studies. The consistent trends among the TEM,x-ray diffraction, and TRPL measurements suggest that in situ SiNx network reduces line defects effectively as well as the point-defect-related nonradiative centers

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

We report on the growth of and evolution of defects in GaN epilayers having single- and double-layer SiNx nanoporous insertion layers. The SiNx was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia. The GaN epilayers and SiNx interlayers were grown on 6H-SiC substrates using three different nucleation layers, namely, low-temperature GaN, high-temperature GaN, and high-temperature AlN nucleation layers. X-ray-diffraction rocking curves and cross-sectional and plan-view transmission electron microscope analyses indicated that a nanoporous SiNx layer can reduce the dislocations density in the GaN overgrown layer to ∼3×108cm−2 range; below this level the defect blocking effect of SiNx would saturate. Therefore the insertion of a second SiNx layer becomes much less effective in reducing dislocations, although it continues to reduce the point defects, as suggested by time-resolved photoluminescence measurements. The insertion of SiNx interlayers was found to improve significantly the mechanical strength of the GaN epilayers resulting in a much lower crack line density