On the strong partition dimension of graphs

We present a different way to obtain generators of metric spaces having the property that the ``position'' of every element of the space is uniquely determined by the distances from the elements of the generators. Specifically we introduce a generator based on a partition of the metric space into sets of elements. The sets of the partition will work as the new elements which will uniquely determine the position of each single element of the space. A set $W$ of vertices of a connected graph $G$ strongly resolves two different vertices $x,y\notin W$ if either $d_G(x,W)=d_G(x,y)+d_G(y,W)$ or $d_G(y,W)=d_G(y,x)+d_G(x,W)$, where $d_G(x,W)=\min\left\{d(x,w)\;:\;w\in W\right\}$. An ordered vertex partition $\Pi=\left\{U_1,U_2,...,U_k\right\}$ of a graph $G$ is a strong resolving partition for $G$ if every two different vertices of $G$ belonging to the same set of the partition are strongly resolved by some set of $\Pi$. A strong resolving partition of minimum cardinality is called a strong partition basis and its cardinality the strong partition dimension. In this article we introduce the concepts of strong resolving partition and strong partition dimension and we begin with the study of its mathematical properties. We give some realizability results for this parameter and we also obtain tight bounds and closed formulae for the strong metric dimension of several graphs.Comment: 16 page

The charge transport process at poly(orthoaminophenol) film electrodes

Poly(o-aminophenol) (POAP) films were deactivated and then reactivated, and dependences of the different charge-transport and charge-transfer parameters on the degree of deactivation (θc ) were obtained by employing Electrochemical Impedance Spectroscopy. While some parameters, such as interfacial metal-film and film-solution resistances the high-frequency capacitance and the redox capacitance exhibit a continuous variation without hysteresis between deactivation and reactivation processes within the whole θc range, others, such as electron and ion diffusion coefficients show not only marked changes of slope from given θc values but also hysteresis between consecutive deactivation and reactivation processes.Fil: Tucceri, Ismael Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentin