Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes

Formation of Porous n-A 3

Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors

Formation of Porous n−A3B5n-A_3B_5 Compounds

Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors

Modification of Optical Properties of Porous AIIIBV Layers Produced by Anodic Etching

Morphology investigations (atomic force microscopy (AFM) and scanning electron microscopy (SEM)), study of Raman scattering (RS) and photoluminescence (PL) have been performed to characterize a series of AIIIBV materials (GaAs, GaP, InP) with an electrochemically prepared porous surface layer. It has been shown that the surface morphology of porous AIIIBV compounds strongly depends on various parameters of the anodizationprocess such as the etching time, current density, composition of etching solution, and illumination during the etching procedure. The enhancement of a Raman signal from porous surfaces, which has been observed for almost all samples, is caused mainly by the breaking of selection rules for corresponding phonon modes and a decrease of the reflection at the porous surface. The peculiarities of the PL spectra of porous AIIIBV compounds are studied in a wide temperature range. The small quantum confinement effect has been observed for GaAs and InP porous surfaces.</jats:p

Morphology and photoluminescence of anodically grown porous layers on some Ga-V compounds

International audienceSingle crystalline p-type Ga-V (V=As, Sb) layers were made porous by anodical etching in fluorhydric acid solution. The morphology, chemical composition and optical properties of porous layers were investigated. Photoluminescence band in the visible range was explained by charge carrier quantum confinement in nanocrystalline particles of the initial material