Frequency and power dependence of spin-current emission by spin pumping in a thin film YIG/Pt system

This paper presents the frequency dependence of the spin current emission in a hybrid ferrimagnetic insulator/normal metal system. The system is based on a ferrimagnetic insulating thin film of Yttrium Iron Garnet (YIG, 200 nm) grown by liquid-phase-epitaxy (LPE) coupled with a normal metal with a strong spin-orbit coupling (Pt, 15 nm). The YIG layer presents an isotropic behaviour of the magnetization in the plane, a small linewidth, and a roughness lower than 0.4 nm. Here we discuss how the voltage signal from the spin current detector depends on the frequency [0.6 - 7 GHz], the microwave power, Pin, [1 - 70 mW], and the in-plane static magnetic field. A strong enhancement of the spin current emission is observed at low frequencies, showing the appearance of non-linear phenomena.Comment: 7 pages, 5 figure

Spin accumulation probed in multiterminal lateral all-metallic devices

We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel barriers. Although the four electrodes are designed as two electrode pairs of the same shape, they nonetheless all exhibit distinct switching fields. As a result the device can have several different magnetic configurations. From the measurements of the amplitude of the spin accumulation, we can identify these configurations, and using the diffusion equation for the spin imbalance, we extract the spin relaxation length $\lambda_\mathrm{sf} = 400 \pm 50$~nm and an interface spin current polarization $P = (10 \pm 1)$ at low temperature and $\lambda_\mathrm{sf} = 350 \pm 50$~nm, $P = (8 \pm 1)$ at room temperature

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.Comment: 5 pages, 3 figure

24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene

We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $\lambda_s$ up to 13~\textmu m at room temperature with relaxation times $\tau_s$ of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m$^2$/s, a value 5 times higher than the best achieved for graphene spin valves up to date. As a consequence, $\lambda_s$ rises up to 24~\textmu m with $\tau_s$ as high as 2.9~ns. We characterized 3 different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the spin relaxation induced by the non-encapsulated outer regions.Comment: 5 pages and 4 figure

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.Comment: 5 pages, 3 figure

Interplay of Peltier and Seebeck effects in nanoscale nonlocal spin valves

We have experimentally studied the role of thermoelectric effects in nanoscale nonlocal spin valve devices. A finite element thermoelectric model is developed to calculate the generated Seebeck voltages due to Peltier and Joule heating in the devices. By measuring the first, second and third harmonic voltage response non locally, the model is experimentally examined. The results indicate that the combination of Peltier and Seebeck effects contributes significantly to the nonlocal baseline resistance. Moreover, we found that the second and third harmonic response signals can be attributed to Joule heating and temperature dependencies of both Seebeck coefficient and resistivity.Comment: 4 pages, 4 figure

Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field

We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 $\mu$m even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is $\tau_{\bot} / \tau_{||} \approx$ 0.75 for zero applied perpendicular electric field. By tuning the electric field this anisotropy changes to $\approx$0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling

Spin transport in graphene nanostructures

Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length to area ratio is much higher than for standard devices, we show that enhanced spin-flip processes at the edges do not seem to play a major role in the spin relaxation. On the other hand, contact induced spin relaxation has a much more dramatic effect for these low dimensional structures. By studying the nonlocal spin transport through a graphene quantum dot we observe that the obtained values for spin relaxation are dominated by the connecting graphene islands and not by the quantum dot itself. Using a simple model we argue that future nonlocal Hanle precession measurements can obtain a more significant value for the spin relaxation time for the quantum dot by using high spin polarization contacts in combination with low tunneling rates

Observation of the spin Peltier effect

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator Yttrium Iron Garnet (YIG), i.e. a heat current generated by a spin current flowing through a Platinum (Pt)|YIG interface. The effect can be explained by the spin torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modelling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.Comment: 5 pages, 3 figures, 4 pages supplementary information, 4 supplementary figure