Flopping-mode electric dipole spin resonance

Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays

The difference of boundary effects between Bose and Fermi systems

In this paper, we show that there exists an essential difference of boundary effects between Bose and Fermi systems both for Dirichlet and Neumann boundary conditions: at low temperatures and high densities the influence of the boundary on the Bose system depends on the temperature but is independent of the density, but for the Fermi case the influence of the boundary is independent of the temperature but depends on the density, after omitting the negligible high-order corrections. We also show that at high temperatures and low densities the difference of the influence of the boundary between Bose and Fermi systems appears in the next-to-leading order boundary contribution, and the leading boundary contribution is independent of the density. Moreover, for calculating the boundary effects at high temperatures and low densities, since the existence of the boundary modification causes the standard virial expansion to be invalid, we introduce a modified virial expansion.Comment: 8 page

A Coherent Spin-Photon Interface in Silicon

Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of two spins has been demonstrated, the interaction of spins via microwave frequency photons could enable long distance spin-spin coupling and "all-to-all" qubit connectivity. Here we demonstrate strong-coupling between a single spin in silicon and a microwave frequency photon with spin-photon coupling rates g_s/(2\pi) > 10 MHz. The mechanism enabling coherent spin-photon interactions is based on spin-charge hybridization in the presence of a magnetic field gradient. In addition to spin-photon coupling, we demonstrate coherent control of a single spin in the device and quantum non-demolition spin state readout using cavity photons. These results open a direct path toward entangling single spins using microwave frequency photons

Direct electronic measurement of the spin Hall effect

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling, which couples the spin of an electron to its momentum, is attracting considerable interest. In a spin-orbit-coupled system, a nonzero spin-current is predicted in a direction perpendicular to the applied electric field, giving rise to a "spin Hall effect"[2-4]. Consistent with this effect, electrically-induced spin polarization was recently detected by optical techniques at the edges of a semiconductor channel[5] and in two-dimensional electron gases in semiconductor heterostructures[6,7]. Here we report electrical measurements of the spin-Hall effect in a diffusive metallic conductor, using a ferromagnetic electrode in combination with a tunnel barrier to inject a spin-polarized current. In our devices, we observe an induced voltage that results exclusively from the conversion of the injected spin current into charge imbalance through the spin Hall effect. Such a voltage is proportional to the component of the injected spins that is perpendicular to the plane defined by the spin current direction and the voltage probes. These experiments reveal opportunities for efficient spin detection without the need for magnetic materials, which could lead to useful spintronics devices that integrate information processing and data storage.Comment: 5 pages, 4 figures. Accepted for publication in Nature (pending format approval

Diffeomorphic random sampling using optimal information transport

In this article we explore an algorithm for diffeomorphic random sampling of nonuniform probability distributions on Riemannian manifolds. The algorithm is based on optimal information transport (OIT)---an analogue of optimal mass transport (OMT). Our framework uses the deep geometric connections between the Fisher-Rao metric on the space of probability densities and the right-invariant information metric on the group of diffeomorphisms. The resulting sampling algorithm is a promising alternative to OMT, in particular as our formulation is semi-explicit, free of the nonlinear Monge--Ampere equation. Compared to Markov Chain Monte Carlo methods, we expect our algorithm to stand up well when a large number of samples from a low dimensional nonuniform distribution is needed.Comment: 8 pages, 3 figure