22 research outputs found
In-Situ Strain Measurement Via X-Ray Diffraction
ABSTRACTA high speed x-ray diffraction system has been built around a Curved Position Sensitive Detector. This system has a hot/cold stage in a modified vacuum chamber to allow for control of the ambient gas mix while in-situ x-ray diffraction spectra are acquired. We have used this system to measure the strain in Al/Cr/SiO2 structures after abrupt changes in temperature. The good adhesion afforded by the Cr layer combined with the large difference in the thermal expansion coefficients of the Al (≃25×10−6/°K) and the quartz (≃0.5×10−6/°K) components make this an ideal sample for demonstrating the capabilities of this system. In-situ resistivity measurement provides an independent indication of the changes in the sample.</jats:p
Intrinsic stress in silicon nitride and silicon dioxide films prepared by various deposition techniques
High-speed X-ray diffraction and <i>in situ</i> resistivity measurements at temperatures of 100 to 1000 K
A system has been constructed which uses a primary-beam focusing monochromator Debye–Scherrer X-ray method to perform simultaneously in situ X-ray diffraction and resistivity measurements at temperatures of 100 to 1000 K. The Inel curved linear detector, which is capable of recording 120° of 20 angle without moving the detector, makes the Debye–Scherrer geometry possible for high-speed dynamic studies. The angular resolution of this system is sufficient to observe the separation of a mixture of tungsten and molybdenum powders. The sensitivity of the system makes it possible to record the diffraction pattern from a 100 Å gold film. The sheet resistivity of the sample can be recorded simultaneously to provide a structure-property correlation. Comparisons with other X-ray diffraction methods using thin films are discussed.</jats:p
A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures
Adhesion Behavior of PIQ to Si/SiO<sub>2</sub> Surfaces
AbstractThe present paper reports the results of an investigation of the adhesion characteristics of PIQ13, an isoindaloquin-azolinedione-modified polyimide, to silicon wafers. The wafers were used both untreated and pretreated with a layer of CVD SiO2. Also investigated was the adhesion behavior of a condensation-type polyimide, P15878. A comparison is made between the behavior of the PIQ with two different coupling agents, an aluminum chelate (Coupler 3) and γ-aminopropyltriethoxy silane (A-1100). Superior adhesion performance of the A-1100 is indicated; and with A-1100, the adhesion of the two resins is similar.</jats:p
