On the quantum and classical scattering times due to charged dislocations in an impure electron gas

We derive the ratio of transport and single particle relaxation times in three and two - dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly placed charged impurities. We find that the ratio is larger than the case of ionized impurity scattering in both three and two-dimensional electron transport.Comment: 4 pages, 3 figure

Giant Magnetoresistance of Self-Assembled ErAs Islands in GaAs

ABSTRACTWe have integrated nanometer-sized ErAs islands in GaAs, resulting in a nano-composite of paramagnetic particles in a semiconductor. Negative giant magnetoresistance of up to four orders of magnitude is observed at low temperatures. We can control the density and size of the ErAs islands, making this an ideal system to investigate transport in magnetic nano-structures.</jats:p

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process

AbstractWe demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from &lt;1010&gt;-oriented stripes is initiated at a low V/II1 ratio to produce smooth, vertical {1120} sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the {1101} facets is inhibited using this two-step process, and that it is possible to maintain the {1120} sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.</jats:p