Damage buildup in GaN under ion bombardment

The damage buildup until amorphization in wurtzite GaN films under keV Light(C-12) and heavy (Au-197) ion bombardment at room and liquid nitrogen (LN2) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for Light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN2 temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN2 and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 X 10(15) cm(-2)), no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sig-modal for LN: temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a "nucleation site" for amorphization with increasing ion dose during irradiation at LN2 temperature. For room-temperature bombardment with heavy ions. the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds From the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed somewhat unexpected behavior of disorder buildup

Effect of ion species on the accumulation of ion-beam damage in GaN

Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV H-1, 40 keV C-12, 50 keV O-16, 600 keV Si-28, 130 keV Cu-63, 200 keV Ag-107, 300 keV Au-197, and 500 keV Bi-209) are studied by a combination of Rutherford backscattering/channeling (RBS/C) spectrometry and cross-sectional transmission electron microscopy. Results show that strong dynamic annealing processes lead to a complex dependence of the damage-buildup behavior in GaN on ion species. For room-temperature bombardment with different ion species, bulk disorder, as measured by RBS/C, saturates at some level that is below the random level, and amorphization proceeds layer-by-layer from the GaN surface with increasing ion dose. The saturation level of bulk disorder depends on implant conditions and is much higher for light-ion bombardment than for the heavy-ion irradiation regime. In the case of light ions, when ion doses needed to observe significant lattice disorder in GaN are large (greater than or similar to 10(16) cm(-2)), chemical effects of implanted species dominate. Such implanted atoms appear to stabilize an amorphous phase in GaN and/or to act as effective traps for ion-beam-generated mobile point defects and enhance damage buildup. In particular, the presence of a large conce ntration of carbon in GaN strongly enhances the accumulation of implantation-produced disorder. For heavier ions, where chemical effects of implanted species seem to be negligible, an increase in the density of collision cascades strongly increases the level of implantation-produced lattice disorder in the bulk as well as the rate of layer-by-layer amorphization proceeding from the surface. Such an increase in stable damage and the rate of planar amorphization is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated defects and/or (ii) a superlinear dependence of ion-beam-generated defects, which survive cascade quenching, on the density of collision cascades. Physical mechanisms responsible for such a superlinear dependence of ion-beam-generated defects on collision cascade density are considered. Mechanisms of surface and bulk amorphization in GaN are also discussed

Genetic Comparison of Stemness of Human Umbilical Cord and Dental Pulp

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Brain resting-state functional MRI connectivity: Morphological foundation and plasticity

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Crystallization and preliminary X-ray crystallographic analysis of a yedU gene product from Escherichia coli

A yedU gene product with a molecular mass of 31 kDa is a hypothetical protein with no known function. The protein was purified and crystallized at 296 K. X-ray diffraction data have been collected to 2.3 Angstrom using synchrotron radiation. The crystals belong to the primitive orthorhombic system, with unit-cell parameters a = 50.56, b = 63.45, c = 168.02 Angstrom. The asymmetric unit contains two monomers of the protein, with a corresponding V-M of 2.25 Angstrom(3) Da(-1) and a solvent content of 44.84%.open2

Functional role of ICAM-3 polymorphism in genetic susceptibility to SARS infection.

Key Messages 1. Severe acute respiratory syndrome (SARS) patients who are homozygous for intercellular adhesion molecule-3 (ICAM-3) Gly143 showed significant association with higher lactate dehydrogenase levels and lower total white blood cell counts on admission. 2. In vitro functional studies demonstrated low level binding of ICAM-3 to DC-SIGN and a wide variation in T-cell response of the wild-type ICAM-3 genotype.published_or_final_versio

Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors

There has been an intense search in recent years for long-lived spin-polarized carriers for spintronic and quantum-computing devices. Here we report that spin polarized quasi-particles in superconducting aluminum layers have surprisingly long spin-lifetimes, nearly a million times longer than in their normal state. The lifetime is determined from the suppression of the aluminum's superconductivity resulting from the accumulation of spin polarized carriers in the aluminum layer using tunnel spin injectors. A Hanle effect, observed in the presence of small in-plane orthogonal fields, is shown to be quantitatively consistent with the presence of long-lived spin polarized quasi-particles. Our experiments show that the superconducting state can be significantly modified by small electric currents, much smaller than the critical current, which is potentially useful for devices involving superconducting qubits

Association of a single nucleotide polymorphism in the CD209 (DC-SIGN) promoter with SARS severity.

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