345 research outputs found

    The Sex and Race Specific Relationship between Anthropometry and Body Fat Composition Determined from Computed Tomography: Evidence from the Multi-Ethnic Study of Atherosclerosis.

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    BackgroundFew studies have investigated the relationship of anthropometric measurements with computed tomography (CT) body fat composition, and even fewer determined if these relationships differ by sex and race.MethodsCT scans from 1,851 participants in the population based Multi-Ethnic Study of Atherosclerosis were assessed for visceral and subcutaneous fat areas by semi-automated segmentation of body compartments. Regression models were used to investigate relationships for anthropometry with visceral and subcutaneous fat separately by sex and race/ethnicity.ResultsParticipants were 50% female, 41% Caucasian, 13% Asian, 21% African American, and 25% Hispanic. For visceral fat, the positive relationship with weight (p = 0.028), waist circumference (p<0.001), waist to hip ratio (p<0.001), and waist to height ratio (p = 0.05) differed by sex, with a steeper slope for men. That is, across the range of these anthropometric measures the rise in visceral fat is faster for men than for women. Additionally, there were differences by race/ethnicity in the relationship with height (p<0.001), weight (p<0.001), waist circumference (p<0.001), hip circumference (p = 0.006), and waist to hip ratio (p = 0.001) with the Hispanic group having shallower slopes. For subcutaneous fat, interaction by sex was found for all anthropometric indices at p<0.05, but not for race/ethnicity.ConclusionThe relationship between anthropometry and underlying adiposity differs by sex and race/ethnicity. When anthropometry is used as a proxy for visceral fat in research, sex-specific models should be used

    Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

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    Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with pp-ii-nn diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs.Comment: 12 pages, 5 figure

    Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

    Get PDF
    Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with p-i-n diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90.5% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs

    High efficiency grating couplers for strain tunable GaAs quantum dot based entangled photon sources

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    The on-chip integration of single photon and entangled photon emitters such as epitaxially grown semiconductor quantum dots into photonic frameworks is a rapidly evolving research field. GaAs quantum dots offer high purity and a high degree of entanglement due to, in part, exhibiting very small fine structure splitting along with short radiative lifetimes. Integrating strain-tunable quantum dots into nanostructures enhances the quantum optical fingerprint, i.e., radiative lifetimes and coupling of these sources, and allows for on-chip manipulation and routing of the generated quantum states of light. Efficient out-coupling of photons for off-chip processing and detection requires carefully engineered mesoscopic structures. Here, we present numerical studies of highly efficient grating couplers reaching up to over 90% transmission. A 2D Gaussian mode overlap of 83.39% for enhanced out-coupling of light from within strain-tunable photonic nanostructures for free-space transmission and single-mode fiber coupling is shown. The photon wavelength under consideration is 780 nm, corresponding to the emission from GaAs quantum dots resembling the 87Rb D2 line. The presented numerical study helps implement such sources for applications in complex quantum optical networks

    Single photon emission from ODT passivated near-surface GaAs quantum dots

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    Epitaxially grown semiconductor quantum dots are promising candidates for pure single photon and polarization-entangled photon pair emission. Excellent optical properties can typically be ensured only if these so-called “artificial atoms” are buried deep inside the semiconductor host material. Quantum dots grown close to the surface are prone to charge carrier fluctuations and trap states on the surface, degrading the brightness, coherence, and stability of the emission. We report on high-purity single photon emission [g(2)(0) = 0.016 ± 0.015] of GaAs/AlGaAs quantum dots that were grown only 20 nm below the surface. Chemical surface passivation with sulfur compounds such as octadecanethiol has been performed on quantum dots with 20, 40, and 98 nm from the surface. The reduction of the density and influence of surface states causes improvements in linewidth and photoluminescence intensity as well as a well-preserved single photon emission. Therefore, the realization of hybrid nanophotonic devices, comprising near-field coupling and high-quality optical properties, comes into reach

    A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K

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    Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications
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