Ballistic electron transport through magnetic domain walls

Electron transport limited by the rotating exchange-potential of domain walls is calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, and Ni. When realistic band structures are used, the domain wall magnetoresistance is enhanced by orders of magnitude compared to the results for previously studied two-band models. Increasing the pitch of a domain wall by confinement in a nano-structured point contact is predicted to give rise to a strongly enhanced magnetoresistance.Comment: 4 pages, 2 figures; to appear in PRB as a brief repor

Three-dimensional virtual planning of corrective osteotomies of distal radius malunions: a systematic review and meta-analysis

The purpose of this study was to summarize and evaluate results of three-dimensional (3D-) planned corrective osteotomies of malunited distal radius fractures. 3D-planning techniques provide the possibility to address 3D-deformity that conventional planning methods might not address. We systematically searched PubMed, EMBASE and the Cochrane library for studies that performed a 3D-planned corrective osteotomy on patients with a malunited distal radius fracture. Fifteen studies with a total of 68 patients were included in the analysis. In 96% of cases, the preoperatively present palmar tilt, radial inclination and ulnar variance showed statistically significant improvement postoperatively with restoration to within 5° or 2 mm of their normal values. Mean flexion–extension, pro-supination and grip strength showed statistically significant improvement (p < 0.05). Complications were reported in 11 out of 68 patients (16%). With the current advances in 3D printing technology, 3D-planned corrective osteotomies seem a promising technique in the treatment of complex distal radius malunions. Level of evidence IV Systematic review of case series, Level IV

Spin Torques in Ferromagnetic/Normal Metal Structures

Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and non-magnetic materials. In multi-terminal devices, the magnetization direction of a one side of a tunnel junction or a ferromagnetic insulator can ideally be switched with negligible charge current dissipation.Comment: 4 pages, 1 figur

Ideal Spin Filters: Theoretical Study of Electron Transmission Through Ordered and Disordered Interfaces Between Ferromagnetic Metals and Semiconductors

It is predicted that certain atomically ordered interfaces between some ferromagnetic metals (F) and semiconductors (S) should act as ideal spin filters that transmit electrons only from the majority spin bands or only from the minority spin bands of the F to the S at the Fermi energy, even for F with both majority and minority bands at the Fermi level. Criteria for determining which combinations of F, S and interface should be ideal spin filters are formulated. The criteria depend only on the bulk band structures of the S and F and on the translational symmetries of the S, F and interface. Several examples of systems that meet these criteria to a high degree of precision are identified. Disordered interfaces between F and S are also studied and it is found that intermixing between the S and F can result in interfaces with spin anti-filtering properties, the transmitted electrons being much less spin polarized than those in the ferromagnetic metal at the Fermi energy. A patent application based on this work has been commenced by Simon Fraser University.Comment: RevTeX, 12 pages, 5 figure

Observation of a controllable PI-junction in a 3-terminal Josephson device

Recently Baselmans et al. [Nature, 397, 43 (1999)] showed that the direction of the supercurrent in a superconductor/normal/superconductor Josephson junction can be reversed by applying, perpendicularly to the supercurrent, a sufficiently large control current between two normal reservoirs. The novel behavior of their 4-terminal device (called a controllable PI-junction) arises from the nonequilibrium electron energy distribution established in the normal wire between the two superconductors. We have observed a similar supercurrent reversal in a 3-terminal device, where the control current passes from a single normal reservoir into the two superconductors. We show theoretically that this behavior, although intuitively less obvious, arises from the same nonequilibrium physics present in the 4-terminal device. Moreover, we argue that the amplitude of the PI-state critical current should be at least as large in the 3-terminal device as in a comparable 4-terminal device.Comment: 4 pages, 4 figures, to appear in Physical Review B Rapid Communication

Spin battery operated by ferromagnetic resonance

Precessing ferromagnets are predicted to inject a spin current into adjacent conductors via Ohmic contacts, irrespective of a conductance mismatch with, for example, doped semiconductors. This opens the way to create a pure spin source spin battery by the ferromagnetic resonance. We estimate the spin current and spin bias for different material combinations.Comment: The estimate for the magnitude of the spin bias is improved. We find that it is feasible to get a measurable signal of the order of the microwave frequency already for moderate rf intensitie

Microscopic nonequilibrium theory of double-barrier Josephson junctions

We study nonequilibrium charge transport in a double-barrier Josephson junction, including nonstationary phenomena, using the time-dependent quasiclassical Keldysh Green's function formalism. We supplement the kinetic equations by appropriate time-dependent boundary conditions and solve the time-dependent problem in a number of regimes. From the solutions, current-voltage characteristics are derived. It is understood why the quasiparticle current can show excess current as well as deficit current and how the subgap conductance behaves as function of junction parameters. A time-dependent nonequilibrium contribution to the distribution function is found to cause a non-zero averaged supercurrent even in the presence of an applied voltage. Energy relaxation due to inelastic scattering in the interlayer has a prominent role in determining the transport properties of double-barrier junctions. Actual inelastic scattering parameters are derived from experiments. It is shown as an application of the microscopic model, how the nature of the intrinsic shunt in double-barrier junctions can be explained in terms of energy relaxation and the opening of Andreev channels.Comment: Accepted for Phys. Rev.

Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf(Si)O matrix causes this decrease as function of temperature. A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance

Interface transparency of superconductor/ferromagnetic multilayers

Quantum Matter and Optic