Crystal truncation rods in kinematical and dynamical x-ray diffraction theories

Crystal truncation rods calculated in the kinematical approximation are shown to quantitatively agree with the sum of the diffracted waves obtained in the two-beam dynamical calculations for different reflections along the rod. The choice and the number of these reflections are specified. The agreement extends down to at least $\sim 10^{-7}$ of the peak intensity. For lower intensities, the accuracy of dynamical calculations is limited by truncation of the electron density at a mathematically planar surface, arising from the Fourier series expansion of the crystal polarizability

Effect of chiral interactions on the structure of Langmuir monolayers

Structural changes in monolayers of the enantiomer and the racemic mixture of 1-hexadecyl-glycerol with temperature and surface pressure variations are compared. On compression, both monolayers exhibit a variation of the tilt azimuth from the direction to the nearest neighbor to the next nearest neighbor. In the monolayer of the racemate, this variation occurs as a first order transition. In the monolayer of the enantiomer, the unit cell is oblique, and continuously passes from a state close to the low-pressure state of the racemate to a state close to its high-pressure state. The azimuths of the unit-cell distortion and that of the tilt remain almost equal to each other. The effect of chirality decreases when the temperature is increased. Structural changes are explained in detail within the framework of the Landau theory of phase transitions

Bunches of misfit dislocations on the onset of relaxation of Si0.4_{0.4}Ge0.6_{0.6}/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60$^\circ$ dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray diffraction peaks do not correspond to the average dislocation density but reveal less than a half of the actual relaxation

Characterization of SiGe thin films using a laboratory X-ray instrument

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation