Sampling dependent systematic errors in effective harmonic models

Effective harmonic methods allow for calculating temperature dependent phonon frequencies by incorporating the anharmonic contributions into an effective harmonic Hamiltonian. The systematic errors arising from such an approximation are explained theoretically and quantified by density functional theory based numerical simulations. Two techniques with different approaches for sampling the finite temperature phase space in order to generate the force-displacement data are compared. It is shown that the error in free energy obtained by using either can exceed that obtained from 0 K harmonic lattice dynamics analysis which neglects the anharmonic effects

Data mining and accelerated electronic structure theory as a tool in the search for new functional materials

Data mining is a recognized predictive tool in a variety of areas ranging from bioinformatics and drug design to crystal structure prediction. In the present study, an electronic structure implementation has been combined with structural data from the Inorganic Crystal Structure Database to generate results for highly accelerated electronic structure calculations of about 22,000 inorganic compounds. It is shown how data mining algorithms employed on the database can identify new functional materials with desired materials properties, resulting in a prediction of 136 novel materials with potential for use as detector materials for ionizing radiation. The methodology behind the automatized ab-initio approach is presented, results are tabulated and a version of the complete database is made available at the internet web site http://gurka.fysik.uu.se/ESP/ (Ref.1).Comment: Project homepage: http://gurka.fysik.uu.se/ESP

First-principles study of point defects at semicoherent interface

Modeling semicoherent metal-metal interfaces has so far been performed using atomistic simulations based on semiempirical interatomic potentials. We demonstrate through more precise ab-initio calculations that key conclusions drawn from previous studies do not conform with the new results which show that single point defects do not delocalize near the interfacial plane, but remain compact. We give a simple qualitative explanation for the difference in predicted results that can be traced back to shortcomings in potential fitting

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration

On the large magnetic anisotropy of Fe_{2}P

We present an investigation on the large magnetic anisotropy of Fe_{2}P, based on {\it Ab Initio} density-functional theory calculations, with a full potential linear muffin-tin orbital (FP-LMTO) basis. We obtain an uniaxial magnetic anisotropy energy (MAE) of 664 \mu eV/f.u., which is in decent agreement with experimental observations. Based on a band structure analysis the microscopical origin of the large magnetic anisotropy is explained. We also show that by straining the crystal structure, the MAE can be enhanced further.Comment: 5 pages, 5 figure

Energy bands of atomic monolayers of various materials: Possibility of energy gap engineering

The mobility of graphene is very high because the quantum Hall effects can be observed even at room temperature. Graphene has the potential of the material for novel devices because of this high mobility. But the energy gap of graphene is zero, so graphene can not be applied to semiconductor devices such as transistors, LEDs, etc. In order to control the energy gaps, we propose atomic monolayers which consist of various materials besides carbon atoms. To examine the energy dispersions of atomic monolayers of various materials, we calculated the electronic states of these atomic monolayers using density functional theory with structural optimizations. The quantum chemical calculation software "Gaussian 03" was used under periodic boundary conditions. The calculation method is LSDA/6-311G(d,p), B3LYP/6-31G(d), or B3LYP/6-311G(d,p). The calculated materials are C (graphene), Si (silicene), Ge, SiC, GeC, GeSi, BN, BP, BAs, AlP, AlAs, GaP, and GaAs. These atomic monolayers can exist in the flat honeycomb shapes. The energy gaps of these atomic monolayers take various values. Ge is a semimetal; AlP, AlAs, GaP, and GaAs are indirect semiconductors; and others are direct semiconductors. We also calculated the change of energy dispersions accompanied by the substitution of the atoms. Our results suggest that the substitution of impurity atoms for monolayer materials can control the energy gaps of the atomic monolayers. We conclude that atomic monolayers of various materials have the potential for novel devices.Comment: This paper was first presented at the 14th International Conference on Modulated Semiconductor Structures (MSS14) held in Kobe, Japan, on 23 July 200

Two-Dimensional Materials from Data Filtering and Ab Initio Calculations

Progress in materials science depends on the ability to discover new materials and to obtain and understand their properties. This has recently become particularly apparent for compounds with reduced dimensionality, which often display unexpected physical and chemical properties, making them very attractive for applications in electronics, graphene being so far the most noteworthy example. Here, we report some previously unknown two-dimensional materials and their electronic structure by data mining among crystal structures listed in the International Crystallographic Structural Database, combined with density-functional-theory calculations. As a result, we propose to explore the synthesis of a large group of two-dimensional materials, with properties suggestive of applications in nanoscale devices, and anticipate further studies of electronic and magnetic phenomena in low-dimensional systems.Peer reviewe