Design of perovskite/crystalline-silicon monolithic tandem solar cells

We present an optical model implemented in the commercial software SETFOS 4.6 for simulating perovskite/silicon monolithic tandem solar cells that exploit light scattering structures. In a first step we validate the model with experimental data of tandem solar cells that either use front- or rear-side textures and extract the internal quantum efficiency of the methyl-ammonium lead iodide (MALI) perovskite sub-cell. In a next step, the software is used to investigate the potential of different device architectures featuring a monolithic integration between the perovskite and silicon sub-cells and exploiting rear- as well as front-side textures for improved light harvesting. We find that, considering the available contact materials, the p-i-n solar cell architecture is the most promising with respect to achievable photocurrent for both flat and textured wafers. Finally, cesium-formamidinium-based perovskite materials with several bandgaps were synthetized, optically characterized and their potential in a tandem device was quantified by simulations. For the simulated layer stack and among the tested materials with bandgaps of 1.7 and 1.6 eV, the one with 1.6 eV bandgap was found to be the most promising, with a potential of reaching a power conversion efficiency of 31%. In order to achieve higher efficiencies using higher band-gap materials, parasitic absorptance in the blue spectral range should be further reduced

Tracking a Tuberculosis Outbreak Over 21 Years: Strain-Specific Single-Nucleotide Polymorphism Typing Combined With Targeted Whole-Genome Sequencing

Background. Whole-genome sequencing (WGS) is increasingly used in molecular-epidemiological investigations of bacterial pathogens, despite cost- and time-intensive analyses. We combined strain-specific single-nucleotide polymorphism (SNP) typing and targeted WGS to investigate a tuberculosis cluster spanning 21 years in Bern, Switzerland. Methods. On the basis of genome sequences of 3 historical outbreak Mycobacterium tuberculosis isolates, we developed a strain-specific SNP-typing assay to identify further cases. We screened 1642 patient isolates and performed WGS on all identified cluster isolates. We extracted SNPs to construct genomic networks. Clinical and social data were retrospectively collected. Results. We identified 68 patients associated with the outbreak strain. Most received a tuberculosis diagnosis in 1991-1995, but cases were observed until 2011. Two thirds were homeless and/or substance abusers. Targeted WGS revealed 133 variable SNP positions among outbreak isolates. Genomic network analyses suggested a single origin of the outbreak, with subsequent division into 3 subclusters. Isolates from patients with confirmed epidemiological links differed by 0-11 SNPs. Conclusions. Strain-specific SNP genotyping allowed rapid and inexpensive identification of M. tuberculosis outbreak isolates in a population-based strain collection. Subsequent targeted WGS provided detailed insights into transmission dynamics. This combined approach could be applied to track bacterial pathogens in real time and at high resolutio

Mycobacterium tuberculosis lineage 4 comprises globally distributed and geographically restricted sublineages

Generalist and specialist species differ in the breadth of their ecological niches. Little is known about the niche width of obligate human pathogens. Here we analyzed a global collection of Mycobacterium tuberculosis lineage 4 clinical isolates, the most geographically widespread cause of human tuberculosis. We show that lineage 4 comprises globally distributed and geographically restricted sublineages, suggesting a distinction between generalists and specialists. Population genomic analyses showed that, whereas the majority of human T cell epitopes were conserved in all sublineages, the proportion of variable epitopes was higher in generalists. Our data further support a European origin for the most common generalist sublineage. Hence, the global success of lineage 4 reflects distinct strategies adopted by different sublineages and the influence of human migration.We thank S. Lecher, S. Li and J. Zallet for technical support. Calculations were performed at the sciCORE scientific computing core facility at the University of Basel. This work was supported by the Swiss National Science Foundation (grants 310030_166687 (S.G.) and 320030_153442 (M.E.) and Swiss HIV Cohort Study grant 740 to L.F.), the European Research Council (309540-EVODRTB to S.G.), TB-PAN-NET (FP7-223681 to S.N.), PathoNgenTrace projects (FP7-278864-2 to S.N.), SystemsX.ch (S.G.), the German Center for Infection Research (DZIF; S.N.), the Novartis Foundation (S.G.), the Natural Science Foundation of China (91631301 to Q.G.), and the National Institute of Allergy and Infectious Diseases (5U01-AI069924-05) of the US National Institutes of Health (M.E.)

Enhanced mobility of hydrogenated MO-LPCVD ZnO contacts for high performances thin film silicon solar cells

In this contribution, we study the increase in metalorganic-low pressure chemical vapor deposited (MO-LPCVD) ZnO thin films conductivity by hydrogen plasma post-treatment. We show that this improvement is linked to defect passivation at grain boundaries, decreasing the electron traps density and resulting in the almost complete suppression of the electron scattering at grain boundaries. For a 2 μm thick non-intentionally doped ZnO layer, electron mobility reaches after treatment values close to 60 cm2V-1s-1 (corresponding to an increase of 100%), with a carrier density still as low as 3 x1019 cm-3 (+1.5 x1019 cm-3). Such layers have an absorbance below 2-3% in the range of 400 to 1100 nm making them among the most transparent and conductive materials reported so far. In addition, we demonstrate that hydrogen plasma posttreated ZnO layers can be used as front electrode for producing highly transparent and conductive electrodes. Eventually, it is shown that hydrogen plasma treatment can also be used on the complete thin film solar cell stack (back contact and silicon device) to improve the cell performances.PV-LABIMT-NE Number: 68

Heterojunction solar cell efficiency improvement on various c-Si substrates by interface recombination modelling

High efficiency Si heterojunction (HJ) solar cells must exhibit low interface recombination, as it limits the cell open circuit voltage (VOC). The study of the interface recombination of various a-Si:H/c-Si lifetime test samples gives insight into the recombination mechanisms, which are found compatible with an amphoteric recombination model [1]. We find that there is a trade-off between reduced interface defect density, yielding high-VOC cells (713mV), and increased field effect passivation resulting in higher efficient cells (19.1%) on flat wafers. Predicted VOCs of 725mV are reached for optimally textured n- and p-type c- Si wafers passivated by intrinsic a-Si:H, but the VOCs of the cells are lower. The injection-level dependence of the surface recombination identifies the efficiency limiting factors of HJ solar cells. Such measurements are thus a powerful indicator to achieve highly efficient devices

Amorphous silicon detectors for proton beam monitoring in FLASH radiotherapy

Ultra-high dose rate radiation therapy (FLASH) based on proton irradiation is of major interest for cancer treatments but creates new challenges for dose monitoring. Amorphous hydrogenated silicon is known to be one of the most radiation-hard semiconductors. In this study, detectors based on this material are investigated at proton dose rates similar to or exceeding those required for FLASH therapy. Tested detectors comprise two different types of contacts, two different thicknesses deposited either on glass or on polyimide substrates. All detectors exhibit excellent linear behaviour as a function of dose rate up to a value of 20 kGy/s. Linearity is achieved independently of the depletion condition of the device and remarkably in passive (unbiased) conditions. The degradation of the performance as a function of the dose rate and its recovery are also discussed

Contribution of copy number variants (CNVs) to congenital, unexplained intellectual and developmental disabilities in Lebanese patients

International audienceBackground: Chromosomal microarray analysis (CMA) is currently the most widely adopted clinical test for patients with unexplained intellectual disability (ID), developmental delay (DD), and congenital anomalies. Its use has revealed the capacity to detect copy number variants (CNVs), as well as regions of homozygosity, that, based on their distribution on chromosomes, indicate uniparental disomy or parental consanguinity that is suggestive of an increased probability of recessive disease. Results: We screened 149 Lebanese probands with ID/DD and 99 healthy controls using the Affymetrix Cyto 2.7 M and SNP6.0 arrays. We report all identified CNVs, which we divided into groups. Pathogenic CNVs were identified in 12.1% of the patients. We review the genotype/phenotype correlation in a patient with a 1q44 microdeletion and refine the minimal critical regions responsible for the 10q26 and 16q monosomy syndromes. Several likely causative CNVs were also detected, including new homozygous microdeletions (9p23p24.1, 10q25.2, and 8p23.1) in 3 patients born to consanguineous parents, involving potential candidate genes. However, the clinical interpretation of several other CNVs remains uncertain, including a microdeletion affecting ATRNL1. This CNV of unknown significance was inherited from the patient's unaffected-mother; therefore, additional ethnically matched controls must be screened to obtain enough evidence for classification of this CNV. Conclusion: This study has provided supporting evidence that whole-genome analysis is a powerful method for uncovering chromosomal imbalances, regardless of consanguinity in the parents of patients and despite the challenge presented by analyzing some CNVs

DAMP HEAT STABILITY OF TRANSPARENT CONDUCTIVE ZINC OXIDES: ROLE OF ENCAPSULANTS AND PROTECTIVE LAYERS

The mechanisms and environmental influences that cause photovoltaic modules performance degradation are poorly understood, but it is well known that water vapour is deeply implicated in the degradation process. Indeed, some layers and interfaces of thin film modules can be moisture sensitive and depending on the processing conditions, they degrade after exposure to damp heat conditions (85°C, 85% relative humidity) [1]. Transparent conductive oxides (TCO), as used in CIGS or thin silicon film cells play a particular role linked to reliability issues. We showed recently that low-pressure chemical vapour deposition zinc oxide (LPCVD ZnO) can withstand damp heat test even without encapsulant providing doping of the ZnO is high enough, though this is unfavourable for free carrier absorption (reduction of spectral response in the infrared part) [2]. Reduction of doping leads to improved optical properties but needs therefore an optimized encapsulation strategy to avoid the deterioration of the TCO conductivity. In previous work, the degradation of LPCVD ZnO used in thin-film silicon solar cells was investigated [3]. It was shown that the decrease of the ZnO conductivity was essentially due to the humidity increasing inside the encapsulant. However other effects take part in the degradation process and remained yet unexplained. In this paper we will report on several other possible sources of degradation, which have been identified. In order to demonstrate and quantify these effects, we used various encapsulants, but without back protection (foil or glass), and we exposed the samples to different type of atmospheres. The resistivity of the ZnO was monitored using an inductive contactless and a four points probe methods. Finally, schemes to perform highly reliable laminates when using lightly doped ZnO are proposed