Self-aligned fabrication process for silicon quantum computer devices

We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal to use the nuclear spins of 31P donors in 28Si as qubits, controlled by metal surface gates and measured using single electron transistors (SETs). The accurate registration of 31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation

Three Key Questions on Fractal Conductance Fluctuations: Dynamics, Quantization and Coherence

Recent investigations of fractal conductance fluctuations (FCF) in electron billiards reveal crucial discrepancies between experimental behavior and the semiclassical Landauer-Buttiker (SLB) theory that predicted their existence. In particular, the roles played by the billiard's geometry, potential profile and the resulting electron trajectory distribution are not well understood. We present measurements on two custom-made devices - a 'disrupted' billiard device and a 'bilayer' billiard device - designed to probe directly these three characteristics. Our results demonstrate that intricate processes beyond those proposed in the SLB theory are required to explain FCF.Comment: 17 pages, 4 figures, in press for Physical Review