52,807 research outputs found

    Impacts of Fire Emissions and Transport Pathways on the Interannual Variation of CO In the Tropical Upper Troposphere

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    This study investigates the impacts of fire emission, convection, various climate conditions and transport pathways on the interannual variation of carbon monoxide (CO) in the tropical upper troposphere (UT), by evaluating the field correlation between these fields using multi-satellite observations and principle component analysis, and the transport pathway auto-identification method developed in our previous study. The rotated empirical orthogonal function (REOF) and singular value decomposition (SVD) methods are used to identify the dominant modes of CO interannual variation in the tropical UT and to study the coupled relationship between UT CO and its governing factors. Both REOF and SVD results confirm that Indonesia is the most significant land region that affects the interannual variation of CO in the tropical UT, and El Nino-Southern Oscillation (ENSO) is the dominant climate condition that affects the relationships between surface CO emission, convection and UT CO. In addition, our results also show that the impact of El Nino on the anomalous CO pattern in the tropical UT varies strongly, primarily due to different anomalous emission and convection patterns associated with different El Nino events. In contrast, the anomalous CO pattern in the tropical UT during La Nina period appears to be less variable among different events. Transport pathway analysis suggests that the average CO transported by the "local convection" pathway (Delta COlocal) accounts for the differences of UT CO between different ENSO phases over the tropical continents during biomass burning season. Delta COlocal is generally higher over Indonesia-Australia and lower over South America during El Nino years than during La Nina years. The other pathway ("advection within the lower troposphere followed by convective vertical transport") occurs more frequently over the west-central Pacific during El Nino years than during La Nina years, which may account for the UT CO differences over this region between different ENSO phases.NASA Aura Science Team (AST) program NNX09AD85GJackson School of Geosciences at the University of Texas at AustinJet Propulsion Laboratory, California Institute of Technology, under NASAGeological Science

    Potential distribution surrounding a photo- emitting plate in a dilute plasma

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    Potential distribution in photo-emitting plate in dilute plasma

    Surface States of the Topological Insulator Bi_{1-x}Sb_x

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    We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.Comment: 15 pages, 7 figure

    Global modeling of secondary organic aerosol formation from aromatic hydrocarbons: high- vs low-yield pathways

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    Formation of SOA from the aromatic species toluene, xylene, and, for the first time, benzene, is added to a global chemical transport model. A simple mechanism is presented that accounts for competition between low and high-yield pathways of SOA formation, wherein secondary gas-phase products react further with either nitrogen oxide (NO) or hydroperoxy radical (HO2) to yield semi- or non-volatile products, respectively. Aromatic species yield more SOA when they react with OH in regions where the [NO]/[HO2] ratios are lower. The SOA yield thus depends upon the distribution of aromatic emissions, with biomass burning emissions being in areas with lower [NO]/[HO2] ratios, and the reactivity of the aromatic with respect to OH, as a lower initial reactivity allows transport away from industrial source regions, where [NO]/[HO2] ratios are higher, to more remote regions, where this ratio is lower and, hence, the ultimate yield of SOA is higher. As a result, benzene is estimated to be the most important aromatic species with regards to formation of SOA, with a total production nearly equal that of toluene and xylene combined. In total, while only 39% percent of the aromatic species react via the low-NOx pathway, 72% of the aromatic SOA is formed via this mechanism. Predicted SOA concentrations from aromatics in the Eastern United States and Eastern Europe are actually largest during the summer, when the [NO]/[HO2] ratio is lower. Global production of SOA from aromatic sources is estimated at 3.5 Tg/yr, resulting in a global burden of 0.08 Tg, twice as large as previous estimates. The contribution of these largely anthropogenic sources to global SOA is still small relative to biogenic sources, which are estimated to comprise 90% of the global SOA burden, about half of which comes from isoprene. Compared to recent observations, it would appear there are additional pathways beyond those accounted for here for production of anthropogenic SOA. However, owing to differences in spatial distributions of sources and seasons of peak production, there are still regions in which aromatic SOA produced via the mechanisms identified here are predicted to contribute substantially to, and even dominate, the local SOA concentrations, such as outflow regions from North America and South East Asia during the wintertime, though total SOA concentrations there are small (~0.1 μg/m^³)

    Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors

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    In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots (QDs). Correspondingly, the spectral response from the annealed QDIP exhibited a redshift. At the higher annealing temperature of 800 °C, in addition to the largely redshifted photoresponse peak of 7.4 µm (compared with the 6.1 µm of the as-grown QDIP), a high energy peak at 5.6 µm (220 meV) was also observed, leading to a broad spectrum linewidth of 40%. This is due to the large interdiffusion effect which could greatly vary the composition of the QDs and thus increase the relative optical absorption intensity at higher energy. The other important detector characteristics such as dark current, peak responsivity, and detectivity were also measured. It was found that the overall device performance was not affected by low annealing temperature, however, for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy. © 2006 American Institute of Physic
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