Formation of Ti–Zr–Cu–Ni bulk metallic glasses

Formation of bulk metallic glass in quaternary Ti–Zr–Cu–Ni alloys by relatively slow cooling from the melt is reported. Thick strips of metallic glass were obtained by the method of metal mold casting. The glass forming ability of the quaternary alloys exceeds that of binary or ternary alloys containing the same elements due to the complexity of the system. The best glass forming alloys such as Ti34Zr11Cu47Ni8 can be cast to at least 4-mm-thick amorphous strips. The critical cooling rate for glass formation is of the order of 250 K/s or less, at least two orders of magnitude lower than that of the best ternary alloys. The glass transition, crystallization, and melting behavior of the alloys were studied by differential scanning calorimetry. The amorphous alloys exhibit a significant undercooled liquid region between the glass transition and first crystallization event. The glass forming ability of these alloys, as determined by the critical cooling rate, exceeds what is expected based on the reduced glass transition temperature. It is also found that the glass forming ability for alloys of similar reduced glass transition temperature can differ by two orders of magnitude as defined by critical cooling rates. The origins of the difference in glass forming ability of the alloys are discussed. It is found that when large composition redistribution accompanies crystallization, glass formation is enhanced. The excellent glass forming ability of alloys such as Ti34Zr11Cu47Ni8 is a result of simultaneously minimizing the nucleation rate of the competing crystalline phases. The ternary/quaternary Laves phase (MgZn2 type) shows the greatest ease of nucleation and plays a key role in determining the optimum compositions for glass formation

Experimental investigation of a double-diffused MOS structure

Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors

Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure

A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area

Possible JPC=0+−J^{PC} = 0^{+-} Exotic State

We study the possible exotic states with $J^{PC} = 0^{+-}$ using the tetraquark interpolating currents with the QCD sum rule approach. The extracted masses are around 4.85 GeV for the charmonium-like states and 11.25 GeV for the bottomomium-like states. There is no working region for the light tetraquark currents, which implies the light $0^{+-}$ state may not exist below 2 GeV.Comment: 13 pages, 11 figures, 2 table