Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier y(c) is exceeded. Our calculations also show that the critical AlN content of the second barrier y(c) will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN)

Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates

A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current-voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley, current ratio and the peak voltage are about 4.8 and 0.44 V, respectivcly The HEMT is characterized by a, gate length of 1 mu m, a, maximum transconductance of 125 mS/mm, and a threshold voltage of -1.0 V. The current-voltage, characteristics of the series-connected RTDs are presented. Tire current-voltage curves of the parallel connection of one RTD and one HEMT are also presented

Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3115450

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(111) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness of HT AlN buffer layer, and the optimized thickness of the HT AlN buffer layer is about 110 nm. Together with the low-temperature (LT) AlN interlayer, high-quality GaN epilayer with low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-mu m gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property

A small signal equivalent circuit model for resonant tunnelling diode

We report a resonant tunneling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps

High-duty-cycle operation of GaAs/AlGaAs quantum cascade laser above liquid nitrogen temperature

We present a detailed study of lambda similar to 9.75 mu m GaAs/AIGaAs quantum cascade lasers. For a coated 2-mm-long and 40-mu m-wide laser, an optical power of 85 mu W is observed 95% duty cycle at 80 K. At a moderate driving pulse (1 kHz and 1% duty cycle), the device presents a peak power more than 20 mW even at 120 K. At 80 K, the fitted result of threshold current densities shows evidence of potential cw operation

Age structure changes and extraordinary lifespan in wild medfly populations

The main purpose of this study was to test the hypotheses that major changes in age structure occur in wild populations of the Mediterranean fruit fly (medfly) and that a substantial fraction of individuals survive to middle age and beyond (> 3-4 weeks). We thus brought reference life tables and deconvolution models to bear on medfly mortality data gathered from a 3-year study of field-captured individuals that were monitored in the laboratory. The average time-to-death of captured females differed between sampling dates by 23.9, 22.7, and 37.0 days in the 2003, 2004, and 2005 field seasons, respectively. These shifts in average times-to-death provided evidence of changes in population age structure. Estimates indicated that middle-aged medflies (> 30 days) were common in the population. A surprise in the study was the extraordinary longevity observed in field-captured medflies. For example, 19 captured females but no reference females survived in the laboratory for 140 days or more, and 6 captured but no reference males survived in the laboratory for 170 days or more. This paper advances the study of aging in the wild by introducing a new method for estimating age structure in insect populations, demonstrating that major changes in age structure occur in field populations of insects, showing that middle-aged individuals are common in the wild, and revealing the extraordinary lifespans of wild-caught individuals due to their early life experience in the field. © 2008 The Authors Journal compilation © 2008 Blackwell Publishing Ltd/The Anatomical Society of Great Britain and Ireland

Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices

Mg-doped AlGaN and GaN/AlGaN superlattice are grown by metalorganic chemical vapour deposition (MOCVD). Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AlGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 x 10(3) Omega cm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 x 10(17) cm(-3) and of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity

Hookworm Infection in Oceania

Hookworm disease and its associated morbidities continue to be a major public health problem in many tropical and subtropical nations and remain endemic throughout the Oceania region. Three species of hookworm cause patent infection in humans in this region: Necator americanus, Ancylostoma duodenale and Ancylostoma ceylanicum. Historical hookworm infection rates of up to 90 % throughout many parts of Oceania have significantly declined; however, the disease remains a major problem requiring ongoing public health intervention. The effectiveness of such interventions is evident in northern Australia, where once widespread hookworm disease is now limited to a few remaining endemic foci of isolated communities in the far north of the country. Outside of Australia, there is limited data available in the literature on hookworm prevalence, but a few recent (since 2000) studies have found hookworm prevalence rates of between 3 and 23 %. Infections with A. caninum, leading to eosinophilic enteritis, and sporadic cases cutaneous larva migrans caused by dermal migration of animal hookworm larva are also reported from several regions. This chapter provides a comprehensive review of both the historical and current literature on species of hookworms infecting humans and the geographical prevalence and distribution of hookworm disease in the Oceania region