10 research outputs found
Heisenberg-limited sensitivity with decoherence-enhanced measurements
Quantum-enhanced measurements use quantum mechanical effects to enhance the sensitivity of the measurement of classical quantities, such as the length of an optical cavity. The major goal is to beat the standard quantum limit (SQL), that is, an uncertainty of order 1/ N, where N is the number of quantum resources (for example, the number of photons or atoms used), and to achieve a scaling 1/N, known as the Heisenberg limit. So far very few experiments have demonstrated an improvement over the SQL. The required quantum states are generally highly entangled, difficult to produce, and very prone to decoherence. Here, we show that Heisenberg- limited measurements can be achieved without the use of entangled states by coupling the quantum resources to a common environment that can be measured at least in part. The method is robust under decoherence, and in fact the parameter dependence of collective decoherence itself can be used to reach a 1/N scaling
Scheme for implementing multitarget qubit controlled-NOT gate of photons and controlled-phase gate of electron spins via quantum dot-microcavity coupled system
A heralded and error-rejecting three-photon hyper-parallel quantum gate through cavity-assisted interactions
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties
