Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface

The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation.Comment: written in LaTeX, 8 pages, 4 figs. available on request from [email protected]

High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual

Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si0.4Ge0.6 seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm2 V−1 s−1 at a carrier density of 2.36×1012 cm−2

Short-Term Uptake of 15N by a Grass and Soil Micro-Organisms after Long-Term Exposure to Elevated CO2

This study examines the effect of elevated CO2 on short-term partitioning of inorganic N between a grass and soil micro-organisms. 15N-labelled NH4+ was injected in the soil of mesocosms of Holcus lanatus (L.) that had been grown for more than 15months at ambient or elevated CO2 in reconstituted grassland soil. After 48 h, the percentage recovery of added 15N was increased in soil microbial biomass N at elevated CO2, was unchanged in total plant N and was decreased in soil extractable N. However, plant N content and microbial biomass N were not significantly affected by elevated CO2. These results and literature data from plant-microbial 15N partitioning experiments at elevated CO2 suggest that the mechanisms controlling the effects of CO2 on short- vs. long-term N uptake and turnover differ. In particular, short-term immobilisation of added N by soil micro-organisms at elevated CO2 does not appear to lead to long-term increases in N in soil microbial biomass. In addition, the increased soil microbial C:N ratios that we observed at elevated CO2 suggest that long-term exposure to CO2 alters either the functioning or structure of these microbial communitie

Quantum interference effects in p-Si1−xGex quantum wells

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field

Global change, nitrification, and denitrification: A review

We reviewed responses of nitrification, denitrification, and soil N2O efflux to elevated CO2, N availability, and temperature, based on published experimental results. We used meta-analysis to estimate the magnitude of response of soil N2O emissions, nitrifying enzyme activity (NEA), denitrifying enzyme activity (DEA), and net and gross nitrification across experiments. We found no significant overall effect of elevated CO2 on N2O fluxes. DEA and NEA significantly decreased at elevated CO2; however, gross nitrification was not modified by elevated CO2, and net nitrification increased. The negative overall response of DEA to elevated CO2 was associated with decreased soil [NO3-], suggesting that reduced availability of electron acceptors may dominate the responses of denitrification to elevated CO2. N addition significantly increased field and laboratory N2O emissions, together with gross and net nitrification, but the effect of N addition on field N2O efflux was not correlated to the amount of N added. The effects of elevated temperature on DEA, NEA, and net nitrification were not significant: The small number of studies available stress the need for more warming experiments in the field. While N addition had large effects on measurements of nitrification and denitrification, the effects of elevated CO2 were less pronounced and more variable, suggesting that increased N deposition is likely to affect belowground N cycling with a magnitude of change that is much larger than that caused by elevated CO2

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 &#177; 1.8) x10&lt;sup&gt;-7&lt;/sup&gt; &#937;-cm&lt;sup&gt;2&lt;/sup&gt; for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.&lt;p&gt;&lt;/p&gt

Ultrasonic inspection and self-healing of Ge and 3C-SiC semiconductor membranes

Knowledge of the mechanical properties and stability of thin film structures is important for device operation. Potential failures related to crack initiation and growth must be identified early, to enable healing through e.g. annealing. Here, three square suspended membranes, formed from a thin layer of cubic silicon carbide (3C-SiC) or germanium (Ge) on a silicon substrate, were characterised by their response to ultrasonic excitation. The resonant frequencies and mode shapes were measured during thermal cycling over a temperature range of 20--100~$^\circ$C. The influence of temperature on the stress was explored by comparison with predictions from a model of thermal expansion of the combined membrane and substrate. For an ideal, non-cracked sample the stress and Q-factor behaved as predicted. In contrast, for a 3C-SiC and a Ge membrane that had undergone vibration and thermal cycling to simulate extended use, measurements of the stress and Q-factor showed the presence of damage, with the 3C-SiC membrane subsequently breaking. However, the damaged Ge sample showed an improvement to the resonant behaviour on subsequent heating. Scanning electron microscopy showed that this was due to a self-healing of sub-micrometer cracks, caused by expansion of the germanium layer to form bridges over the cracked regions, with the effect also observable in the ultrasonic inspection

Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates

Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain

Nutrient relations in calcareous grassland under elevated CO2

Plant nutrient responses to 4 years of CO2 enrichment were investigated in situ in calcareous grassland. Beginning in year 2, plant aboveground C:N ratios were increased by 9% to 22% at elevated CO2 (P > 0.01), depending on year. Total amounts of N removed in biomass harvests during the first 4 years were not affected by elevated CO2 (19.9 +/- 1.3 and 21.1 +/- 1.3 g N m(-2) at ambient and elevated CO2), indicating that the observed plant biomass increases were solely attained by dilution of nutrients. Total aboveground P and tissue N:P ratios also were not altered by CO2 enrichment (12.5 +/- 2 g N g(-1) P in both treatments). In contrast to non-legumes (<98% of community aboveground biomass), legume C/N was not reduced at elevated CO2 and legume N:P was slightly increased. We attribute the less reduced N concentration in legumes at elevated CO2 to the fact that virtually all legume N originated from symbiotic N-2 fixation (%N-dfa approximate to 90%), and thus legume growth was not limited by soil N. While total plant N was not affected by elevated CO2, microbial N pools increased by +18% under CO2 enrichment (P = 0.04) and plant available soil N decreased. Hence, there was a net increase in the overall biotic N pool, largely due increases in the microbial N pool. In order to assess the effects of legumes for ecosystem CO2 responses and to estimate the degree to which plant growth was P-limited, two greenhouse experiments were conducted, using firstly undisturbed grassland monoliths from the field site, and secondly designed 'microcosm' communities on natural soil. Half the microcosms were planted with legumes and half were planted without. Both monoliths and microcosms were exposed to elevated CO2 and P fertilization in a factored design. After two seasons, plant N pools in both unfertilized monoliths and microcosm communities were unaffected by CO2 enrichment, similar to what was found in the field. However, when P was added total plant N pools increased at elevated CO2. This community-level effect originated almost solely from legume stimulation. The results suggest a complex interaction between atmospheric CO2 concentrations, N and P supply. Overall ecosystem productivity is N-limited, whereas CO2 effects on legume growth and their N2 fixation are limited by P

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%