Optimization and Parallelization of a force field for silicon using OpenMP

The force field by Lenosky and coworkers is the latest force field for silicon which is one of the most studied materials. It has turned out to be highly accurate in a large range of test cases. The optimization and parallelization of this force field using OpenMp and Fortan90 is described here. The optimized program allows us to handle a very large number of silicon atoms in large scale simulations. Since all the parallelization is hidden in a single subroutine that returns the total energies and forces, this subroutine can be called from within a serial program in an user friendly way.Comment: The program can be obtained upon request from the author ([email protected]

Characterization of the State of Hydrogen

Fermionic path integral Monte Carlo simulations have been applied to study the equilibrium properties of the hydrogen and deuterium in the density and temperature range of 1.6 < rs < 14.0 and 5000K < T < 167000K. We use this technique to determine the phase diagram by identifying the plasma, the molecular, atomic and metallic regime. We explain how one can identify the phases in the path integral formalism and discuss the state of hydrogen for 5 points in the temperature-density plane. Further we will provide arguments for the nature of the transitions between the regimes.Comment: 4 pages, 2 figures, proceedings of 9th International Workshop on the Physics of Nonideal Plasmas, Rostock, Germany, September 199

Global minimum determination of the Born-Oppenheimer surface within density functional theory

We present a novel method, which we call dual minima hopping method (DMHM), that allows us to find the global minimum of the potential energy surface (PES) within density functional theory for systems where a fast but less accurate calculation of the PES is possible. This method can rapidly find the ground state configuration of clusters and other complex systems with present day computer power by performing a systematic search. We apply the new method to silicon clusters. Even though these systems have already been extensively studied by other methods, we find new configurations that are lower in energy than the previously found.Comment: 4 pages, 3 figures, minor changes, more structures are presented no

Questioning the existence of a unique ground state structure for Si clusters

Density functional and quantum Monte Carlo calculations challenge the existence of a unique ground state structure for certain Si clusters. For Si clusters with more than a dozen atoms the lowest ten isomers are close in energy and for some clusters entropic effects can change the energetic ordering of the configurations. Isotope pure configurations with rotational symmetry and symmetric configurations containing one additional isotope are disfavored by these effects. Comparisons with experiment are thus difficult since a mixture of configurations is to be expected at thermal equilibrium

Low-density silicon allotropes for photovoltaic applications

Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total 44 metastable phases are presented, of which 11 exhibit direct or quasi-direct band-gaps in the range of $\approx$1.0-1.8 eV, close to the optimal Shockley-Queisser limit of $\approx$1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective displacement, involving both translation and rotation, of five atoms in a screw-like motion along $[111]$ directions. The elucidation of this pathway demonstrates the utility of combining tight-binding molecular dynamics with \textit{ab initio} density functional calculations to probe diffusion mechanisms. Using density functional theory to obtain diffusion barriers and the prefactor, we calculate a diffusion constant of $4 \cdot 10^{-5} \exp (- 0.49 {\rm eV} / k_{B} T) {\rm cm^2/s}$. Because of the low diffusion barrier, $I_{3}^{b}$ diffusion may be an important process under conditions such as ion implantation that creates excess interstitials, hence favoring formation of interstitial clusters

Electronic structure of periodic curved surfaces -- continuous surface versus graphitic sponge

We investigate the band structure of electrons bound on periodic curved surfaces. We have formulated Schr\"{o}dinger's equation with the Weierstrass representation when the surface is minimal, which is numerically solved. Bands and the Bloch wavefunctions are basically determined by the way in which the ``pipes'' are connected into a network, where the Bonnet(conformal)-transformed surfaces have related electronic strucutres. We then examine, as a realisation of periodic surfaces, the tight-binding model for atomic networks (``sponges''), where the low-energy spectrum coincides with those for continuous curved surfaces.Comment: 4 page

Structure and formation energy of carbon nanotube caps

We present a detailed study of the geometry, structure and energetics of carbon nanotube caps. We show that the structure of a cap uniquely determines the chirality of the nanotube that can be attached to it. The structure of the cap is specified in a geometrical way by defining the position of six pentagons on a hexagonal lattice. Moving one (or more) pentagons systematically creates caps for other nanotube chiralities. For the example of the (10,0) tube we study the formation energy of different nanotube caps using ab-initio calculations. The caps with isolated pentagons have an average formation energy 0.29+/-0.01eV/atom. A pair of adjacent pentagons requires a much larger formation energy of 1.5eV. We show that the formation energy of adjacent pentagon pairs explains the diameter distribution in small-diameter nanotube samples grown by chemical vapor deposition.Comment: 8 pages, 8 figures (gray scale only due to space); submitted to Phys. Rev.

Temperature driven α\alpha to β\beta phase-transformation in Ti, Zr and Hf from first principles theory combined with lattice dynamics

Lattice dynamical methods used to predict phase transformations in crystals typically deal with harmonic phonon spectra and are therefore not applicable in important situations where one of the competing crystal structures is unstable in the harmonic approximation, such as the bcc structure involved in the hcp to bcc martensitic phase transformation in Ti, Zr and Hf. Here we present an expression for the free energy that does not suffer from such shortcomings, and we show by self consistent {\it ab initio} lattice dynamical calculations (SCAILD), that the critical temperature for the hcp to bcc phase transformation in Ti, Zr and Hf, can be effectively calculated from the free energy difference between the two phases. This opens up the possibility to study quantitatively, from first principles theory, temperature induced phase transitions.Comment: 4 pages, 3 figure

Finding the reconstructions of semiconductor surfaces via a genetic algorithm

In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting good structural candidates for further electronic structure calculations and comparison with scanning tunnelling microscope (STM) images. We illustrate the method for the case of Si(105), and build a database of structures that includes the previously found low-energy models, as well as a number of novel configurations.Comment: 4 figures, 1 tabl