8,159 research outputs found

    Analysis of removal and decomposition pathways of Vaporized Hydrogen Peroxide (VHP) for aircraft decontamination operation

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    In response to possible terrorist attacks and epidemic/pandemic diseases, there is a need for efficient infection control and sanitization of airliners. Use of vaporized hydrogen peroxide (VHP) is a promising method to achieve the goal. However, the impact of disposed VHP on atmospheric environment after decontamination operation needs to be fully understood to avoid any detrimental consequence caused by airliner decontamination. This paper analyzed the removal and decomposition pathways of VHP in the atmosphere, including physical and chemical pathways. Absorption by water droplets in atmosphere and photolytic decay mechanisms have been investigated. The results show that the uptake to water droplets in the air appears to be a major pathway for the removal of VHP

    Induction chemotherapy for squamous cell carcinomas of the oral cavity: A cumulative meta-analysis

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    Induction chemotherapy (ICT) is a controversial treatment for head and neck squamous cell carcinomas (HNSCC). Despite numerous randomized controlled trials (RCTs), a majority do not have enough statistical power alone to conclude ICT’s treatment value among oral squamous carcinoma patients (OSCC) since many addressed HNSCC as one entity instead of by specific subtypes. By performing a systematic review and cumulative meta-analysis, we aim to determine the benefits of ICT in OSCC therapy. A literature search identified for RCTs comparing OSCC patients who received ICT against those without. Log-hazard ratio, and relative risk were used for comparison. Heterogeneity was determined using the I2 statistic package. The primary endpoint was overall survival (OS), followed by disease-free survival (DFS), locoregional recurrence (LRR) and distant metastasis (DM) as secondary endpoints. RESULTS: 27 randomized trials were included for analysis (n = 2872 patients). The shortest median follow-up was 15 months whereas the longest was 11.5 years. ICT does not improve OS (HR = 0.947, 95% CI 0.85–1.05, p = 0.318), DFS (RR = 1.05, 95% CI 0.92–1.21, p = 0.462) and DM (RR = 0.626, CI 95% 0.361–1.086, p = 0.096) compared to locoregional treatment alone. However, there was a significant improvement to LRR (RR = 0.778, 95% CI 0.622–0.972, p = 0.027). There is no evidence ICT improves survival outcomes for OSCC patients. However, ICT reduces locoregional recurrence of OSCC, which may need further verification.preprin

    Review of noise sources in magnetic tunnel junction sensors

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    Invited Oral Presentation: M-13This journal issue contain selected papers from the Asia-Pacific Data Storage Conference 2010Noise problem limits the sensitivity of magnetic tunnel junction (MTJ) sensors for ultra-low magnetic field applications. Noise analysis not only helps in finding ways to eliminate noise disturbances but also essential for understanding the electronic and magnetic properties of MTJs. These approaches provide insight for optimizing the design of MTJ sensors before fabrication. This paper reviews the noise sources in MTJ sensors reported in recent years. Both the origins and mathematical derivations of the noise sources are presented, illustrating how different factors affecting the performance of MTJ sensors. A brief outlook of challenges in the future is also given. © 2011 IEEE.published_or_final_versio

    A magnetically shielded instrument for magnetoresistance and noise characterizations of magnetic tunnel junction sensors

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    A magnetically shielded setup was developed for characterizing magnetoresistance (MR) and noise properties of magnetic tunneling junction (MTJ) sensors. A mu-metal shielding is installed to avoid the interference of external magnetic disturbance. Both MR curves and noise power spectra of MTJ sensors can be obtained for further data analysis. Moreover, a hard-axis magnetic field can be applied to eliminate the hysteresis and the linear field response of MTJ sensors can be measured. The preliminary measurement results on MTJ sensors are presented to illustrate the characterization capabilities of this setup. © 2010 IEEE.published_or_final_versionThe 2010 IEEE International Conference of Electronic Devices and Solid-State Circuits (EDSSC), Hong Kong, 15-17 December 2010. In Proceedings of EDSSC, 2010, p. 1-

    Magnetic tunnel junction sensors with conetic alloy

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    Poster Session - F. Storage Applications and Others: PF-12This journal issue contain selected papers of APDSC'10Al 2O 3 magnetic tunneling junction (MTJ) sensors were fabricated with Conetic alloy Ni 77Fe 14Cu 5Mo 4 deposited as the free layer and pinned layer for its soft magnetic properties. It was observed that the Al 2O 3 MTJ sensors with Conetic exhibited relatively small easy-axis coercivity. Tunneling magnetoresistance (TMR) and noise measurements were carried out to characterize the sensors. TMR of 9.5% and Hooge parameter of 3.825 × 10 -7μm 2 were achieved without any hard-axis field. Hard-axis bias field was applied to eliminate the hysteresis and improve the linear field response of the MTJ sensor. The hysteresis was removed by applying an external magnetic field along the hard axis at 8 Oe and the sensor sensitivity was 0.4 %/Oe within a linear region at room temperature. The relationship between the Hooge parameter and hard-axis field was also investigated and the result demonstrated that the 1/f noise can be suppressed by an optimized hard-axis bias field. This work shows that it is feasible to use Conetic alloy as the soft magnetic layers in MTJ sensors for its small coercivity, and a hard-axis bias field can be used to linearize the sensor response and suppress the 1/f noise. © 2011 IEEE.published_or_final_versionThe Asia-Pacific Data Storage Conference (APDSC'10), Hualien, Taiwan, 27-29 October 2010. In IEEE Transactions on Magnetics, 2011, v. 47 n. 3, p. 714-71

    Stenting in small coronary arteries: initial experience with the Gianturco-roubin II stent

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    Electrophysiological Mechanisms of Brugada Syndrome: Insights from Pre-clinical and Clinical Studies.

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    This is the final version of the article. It first appeared from Frontiers via https://doi.org/10.3389/fphys.2016.00467Brugada syndrome (BrS), is a primary electrical disorder predisposing affected individuals to sudden cardiac death via the development of ventricular tachycardia and fibrillation (VT/VF). Originally, BrS was linked to mutations in the SCN5A, which encodes for the cardiac Na+ channel. To date, variants in 19 genes have been implicated in this condition, with 11, 5, 3, and 1 genes affecting the Na+, K+, Ca2+, and funny currents, respectively. Diagnosis of BrS is based on ECG criteria of coved- or saddle-shaped ST segment elevation and/or T-wave inversion with or without drug challenge. Three hypotheses based on abnormal depolarization, abnormal repolarization, and current-load-mismatch have been put forward to explain the electrophysiological mechanisms responsible for BrS. Evidence from computational modeling, pre-clinical, and clinical studies illustrates that molecular abnormalities found in BrS lead to alterations in excitation wavelength (λ), which ultimately elevates arrhythmic risk. A major challenge for clinicians in managing this condition is the difficulty in predicting the subset of patients who will suffer from life-threatening VT/VF. Several repolarization risk markers have been used thus far, but these neglect the contributions of conduction abnormalities in the form of slowing and dispersion. Indices incorporating both repolarization and conduction and based on the concept of λ have recently been proposed. These may have better predictive values than the existing markers.GT received a BBSRC Doctoral CASE Studentship at the University of Cambridge and thanks the Croucher Foundation of Hong Kong for the support of his Clinical Assistant Professorship. YC is supported by the ESRC for her Ph.D. studies at the University of Cambridge. BY received funding from the Research Grant Council of Hong Kong for his research

    Resistive switching and threshold switching behaviors in La 0.1Bi 0.9Fe 1-xCo xO 3 ceramics

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    The effects of cobalt doping on the electrical conductivity of La 0.1Bi 0.9Fe 1-xCo xO 3 (LBFCO, x=0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50°C and 80°C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects. © 2012 American Institute of Physics.published_or_final_versio

    Magnetic tunnel junction magnetic field sensor design tool

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    A spreadsheet-based magnetic tunnel junction (MTJ) sensor design tool is presented in this paper. The system is developed using Excel and Visual Basic Application. It allows users to optimize the various parameters of the sensor design with the goal of SQUID-like sensitivity. Users can input parameters of the design including magnetic properties, junction areas, and free layers thicknesses. The design tool will then calculate and display automatically various noise sources including Johnson noise, shot noise, 1/f noise, and thermal magnetic noise that must be considered when building MTJ magnetic field sensors. Graphs predicting the sensitivities, operating current and power of the finished sensors are shown and fine tuning of each design parameter is allowed using the scrollbars provided. Using this design tool, effects of changes made to any design parameter can be clearly observed and detailed noise analysis can be studied without manually repeating complex calculations. ©2010 IEEE.published_or_final_versionThe 3rd International Nanoelectronics Conference (INEC 2010), Hong Kong, China, 3-8 January 2010. In Proceedings of the 3rd INEC, 2010, p. 1149-115
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