Long-range self-interacting dark matter in the Sun

We investigate the implications of the long-rang self-interaction on both the self-capture and the annihilation of the self-interacting dark matter (SIDM) trapped in the Sun. Our discussion is based on a specific SIDM model in which DM particles self-interact via a light scalar mediator, or Yukawa potential, in the context of quantum mechanics. Within this framework, we calculate the self-capture rate across a broad region of parameter space. While the self-capture rate can be obtained separately in the Born regime with perturbative method, and the classical limits with the Rutherford formula, our calculation covers the gap between in a non-perturbative fashion. Besides, the phenomelogy of both the Sommerfeld-enhanced s- and p-wave annihilation of the solar SIDM is also involved in our discussion. Moreover, by combining the analysis of the Super-Kamiokande (SK) data and the observed DM relic density, we constrain the nuclear capture rate of the DM particles in the presence of the dark Yukawa potential. The consequence of the long-range dark force on probing the solar SIDM turns out to be significant if the force-carrier is much lighter than the DM particle, and a quantitative analysis is provided.Comment: matches the published versio

Analytical ground state for the Jaynes-Cummings model with the ultrastrong coupling

We present a generalized variational method to analytically obtain the ground-state properties of the unsolvable Jaynes-Cummings model with the ultrastrong coupling. An explicit expression for the ground-state energy, which agrees well with the numerical simulation in a wide range of the experimental parameters, is given. In particular, the introduced method can successfully solve this Jaynes-Cummings model with the positive detuning (the atomic resonant level is larger than the photon frequency), which can not be treated in the adiabatical approximation and the generalized rotating-wave approximation. Finally, we also demonstrate analytically how to control the mean photon number by means of the current experimental parameters including the photon frequency, the coupling strength, and especially the atomic resonant level.Comment: 4 figure

Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on 2D graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.Comment: 12 pages, 4 figure