Contact Lie algebras of vector fields on the plane

The paper is devoted to the complete classification of all real Lie algebras of contact vector fields on the first jet space of one-dimensional submanifolds in the plane. This completes Sophus Lie's classification of all possible Lie algebras of contact symmetries for ordinary differential equations. As a main tool we use the abstract theory of filtered and graded Lie algebras. We also describe all differential and integral invariants of new Lie algebras found in the paper and discuss the infinite-dimensional case.Comment: 20 pages. Published copy, also available at http://www.maths.warwick.ac.uk/gt/GTVol3/paper1.abs.htm

Status of Lattice QCD

Significant progress has recently been achieved in the lattice gauge theory calculations required for extracting the fundamental parameters of the standard model from experiment. Recent lattice determinations of such quantities as the kaon $B$ parameter, the mass of the $b$ quark, and the strong coupling constant have produced results and uncertainties as good or better than the best conventional determinations. Many other calculations crucial to extracting the fundamental parameters of the standard model from experimental data are undergoing very active development. I review the status of such applications of lattice QCD to standard model phenomenology, and discuss the prospects for the near future.Comment: 20 pages, 8 embedded figures, uuencoded, 2 missing figures. (Talk presented at the Lepton-Photon Symposium, Cornell University, Aug. 10-15, 1993.

Strong convergence rates of probabilistic integrators for ordinary differential equations

Probabilistic integration of a continuous dynamical system is a way of systematically introducing model error, at scales no larger than errors introduced by standard numerical discretisation, in order to enable thorough exploration of possible responses of the system to inputs. It is thus a potentially useful approach in a number of applications such as forward uncertainty quantification, inverse problems, and data assimilation. We extend the convergence analysis of probabilistic integrators for deterministic ordinary differential equations, as proposed by Conrad et al.\ (\textit{Stat.\ Comput.}, 2017), to establish mean-square convergence in the uniform norm on discrete- or continuous-time solutions under relaxed regularity assumptions on the driving vector fields and their induced flows. Specifically, we show that randomised high-order integrators for globally Lipschitz flows and randomised Euler integrators for dissipative vector fields with polynomially-bounded local Lipschitz constants all have the same mean-square convergence rate as their deterministic counterparts, provided that the variance of the integration noise is not of higher order than the corresponding deterministic integrator. These and similar results are proven for probabilistic integrators where the random perturbations may be state-dependent, non-Gaussian, or non-centred random variables.Comment: 25 page

Charm elliptic flow at RHIC

Charm elliptic flow in heavy ion collisions at the Relativistic Heavy Ion Collider (RHIC) is studied in a multiphase transport model. Assuming that the cross section for charm quark scattering with other light quarks is the same as that between light quarks, we find that both charm and light quark elliptic flows are sensitive to the value of the cross section. Compared to that of light quarks, the elliptic flow of charm quarks is smaller at low transverse momentum but approaches comparable values at high transverse momentum. Similar features are seen in the elliptic flow of charmed mesons as well as that of the electrons from their semileptonic decays when the charmed mesons are produced from quark coalescence during hadronization of the partonic matter. To describe the large electron elliptic flow observed in available experimental data requires a charm quark scattering cross section that is much larger than that given by the perturbative QCD

Application of convolve-multiply-convolve SAW processor for satellite communications

There is a need for a satellite communications receiver than can perform simultaneous multi-channel processing of single channel per carrier (SCPC) signals originating from various small (mobile or fixed) earth stations. The number of ground users can be as many as 1000. Conventional techniques of simultaneously processing these signals is by employing as many RF-bandpass filters as the number of channels. Consequently, such an approach would result in a bulky receiver, which becomes impractical for satellite applications. A unique approach utilizing a realtime surface acoustic wave (SAW) chirp transform processor is presented. The application of a Convolve-Multiply-Convolve (CMC) chirp transform processor is described. The CMC processor transforms each input channel into a unique timeslot, while preserving its modulation content (in this case QPSK). Subsequently, each channel is individually demodulated without the need of input channel filters. Circuit complexity is significantly reduced, because the output frequency of the CMC processor is common for all input channel frequencies. The results of theoretical analysis and experimental results are in good agreement

Invariants of differential equations defined by vector fields

We determine the most general group of equivalence transformations for a family of differential equations defined by an arbitrary vector field on a manifold. We also find all invariants and differential invariants for this group up to the second order. A result on the characterization of classes of these equations by the invariant functions is also given.Comment: 13 page

SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100 °C. After removal of the SiO2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550 °C for 2 h plus at 700 °C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100 °C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100 °C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample