Does Contract Law Need Morality?

In The Dignity of Commerce, Nathan Oman sets out an ambitious market theory of contract, which he argues is a superior normative foundation for contract law than either the moralist or economic justifications that currently dominate contract theory. In doing so, he sets out a robust defense of commerce and the market-place as contributing to human flourishing that is a refreshing and welcome contribution in an era of market alarmism. But the mar-ket theory ultimately falls short as either a normative or prescriptive theory of contract. The extent to which law, public policy, and the-ory should account for values other than economic efficiency is a longstanding debate. Whatever the merits of that debate, we conclude that contract law does not need morality as envisioned by Oman—a fluid, subjective, and seemingly instinctual approach to the morality of markets

The centripetal force law and the equation of motion for a particle on a curved hypersurface

It is pointed out that the current form of extrinsic equation of motion for a particle constrained to remain on a hypersurface is in fact a half-finished version for it is established without regard to the fact that the particle can never depart from the geodesics on the surface. Once the fact be taken into consideration, the equation takes that same form as that for centripetal force law, provided that the symbols are re-interpreted so that the law is applicable for higher dimensions. The controversial issue of constructing operator forms of these equations is addressed, and our studies show the quantization of constrained system based on the extrinsic equation of motion is favorable.Comment: 5 pages, major revisio

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\mu}m, a channel length of 9 {\mu}m, and a top-gate length of 3 {\mu}m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm^2/Vs. The highest current on/off ratio is over 10^8.Comment: submitted to IEEE Electron Device Letter