Electron-phonon coupling in potassium-doped graphene: Angle-resolved photoemission spectroscopy

The electron-phonon coupling in potassium-doped graphene on Ir(111) is studied via the renormalization of the pi* band near the Fermi level, using angle-resolved photoemission spectroscopy. The renormalization is found to be fairly weak and almost isotropic, with a mass enhancement parameter of lambda= 0.28(6) for both the K-M and the K-G direction. These results are found to agree well with recent first principles calculations.Comment: 5 pages, 3 figure

Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically reduced. In this work, we study a highly scaled back-end-of-line (BEOL) compatible, ferroelectric field-effect transistor (FeFET) that integrates a metal interlayer in the gate stack. Through analytical models and calibrated TCAD simulations, we show how this device can achieve a multi-level operation exploiting the interplay between the ferroelectric polarization and the charge in the metal interlayer. Such a working principle does not rely on a domain-dependent inhomogeneous polarization, and the device operation is thus ensured also for a homogeneous ferroelectric material. We also demonstrate that the charge in the interlayer can effectively stabilize the ferroelectric polarization even in the absence of a high concentration of trapped charges in the gate stack. The potentiation and depression curves for the readout conductance confirm that the proposed device can be operated as a memristor for neuromorphic computing applications. Moreover, we show how the choice of the dielectric in the metal-ferroelectric-dielectric-metal gate stack can be used as a design knob to reduce the device operation voltage

Thermal Stability of Corrugated Epitaxial Graphene Grown on Re(0001)

We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 angstrom, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moire cell, though it requires the presence of diffusing graphene layer vacancies

Metastable precursors during the oxidation of the Ru(0001) surface

Using density-functional theory, we predict that the oxidation of the Ru(0001) surface proceeds via the accumulation of sub-surface oxygen in two-dimensional islands between the first and second substrate layer. This leads locally to a decoupling of an O-Ru-O trilayer from the underlying metal. Continued oxidation results in the formation and stacking of more of these trilayers, which unfold into the RuO_2(110) rutile structure once a critical film thickness is exceeded. Along this oxidation pathway, we identify various metastable configurations. These are found to be rather close in energy, indicating a likely lively dynamics between them at elevated temperatures, which will affect the surface chemical and mechanical properties of the material.Comment: 11 pages including 9 figures. Submitted to Phys. Rev. B. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

Surface Core Level Shifts of Clean and Oxygen Covered Ru(0001)

We have performed high resolution XPS experiments of the Ru(0001) surface, both clean and covered with well-defined amounts of oxygen up to 1 ML coverage. For the clean surface we detected two distinct components in the Ru 3d_{5/2} core level spectra, for which a definite assignment was made using the high resolution Angle-Scan Photoelectron Diffraction approach. For the p(2x2), p(2x1), (2x2)-3O and (1x1)-O oxygen structures we found Ru 3d_{5/2} core level peaks which are shifted up to 1 eV to higher binding energies. Very good agreement with density functional theory calculations of these Surface Core Level Shifts (SCLS) is reported. The overriding parameter for the resulting Ru SCLSs turns out to be the number of directly coordinated O atoms. Since the calculations permit the separation of initial and final state effects, our results give valuable information for the understanding of bonding and screening at the surface, otherwise not accessible in the measurement of the core level energies alone.Comment: 16 pages including 10 figures. Submitted to Phys. Rev. B. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

Stability of sub-surface oxygen at Rh(111)

Using density-functional theory (DFT) we investigate the incorporation of oxygen directly below the Rh(111) surface. We show that oxygen incorporation will only commence after nearly completion of a dense O adlayer (\theta_tot = 1.0 monolayer) with O in the fcc on-surface sites. The experimentally suggested octahedral sub-surface site occupancy, inducing a site-switch of the on-surface species from fcc to hcp sites, is indeed found to be a rather low energy structure. Our results indicate that at even higher coverages oxygen incorporation is followed by oxygen agglomeration in two-dimensional sub-surface islands directly below the first metal layer. Inside these islands, the metastable hcp/octahedral (on-surface/sub-surface) site combination will undergo a barrierless displacement, introducing a stacking fault of the first metal layer with respect to the underlying substrate and leading to a stable fcc/tetrahedral site occupation. We suggest that these elementary steps, namely, oxygen incorporation, aggregation into sub-surface islands and destabilization of the metal surface may be more general and precede the formation of a surface oxide at close-packed late transition metal surfaces.Comment: 9 pages including 9 figure files. Submitted to Phys. Rev. B. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off

High contact resistance (RC) between 3D metallic conductors and single-layer 2D semiconductors poses major challenges toward their integration in nanoscale electronic devices. While in experiments the large RC values can be partly due to defects, ab initio simulations suggest that, even in defect-free structures, the interaction between metal and semiconductor orbitals can induce gap states that pin the Fermi level in the semiconductor band gap, increase the Schottky barrier height (SBH), and thus degrade the contact resistance. In this paper, we investigate, by using an in-house-developed ab initio transport methodology that combines density functional theory and nonequilibrium Green’s function (NEGF) transport calculations, the physical properties and electrical resistance of several options for n-type top metal contacts to monolayer MoS2, even in the presence of buffer layers, and for p-type contacts to monolayer WSe2. The delicate interplay between the SBH and tunneling barrier thickness is quantitatively analyzed, confirming the excellent properties of the Bi-MoS2 system as an n-type ohmic contact. Moreover, simulation results supported by literature experiments suggest that the Au-WSe2 system is a promising candidate for p-type ohmic contacts. Finally, our analysis also reveals that a small modulation of a few angstroms of the distance between the (semi)metal and the transition-metal dichalcogenide (TMD) leads to large variations of RC. This could help to explain the scattering of RC values experimentally reported in the literature because different metal deposition techniques can result in small changes of the metal-to-TMD distance besides affecting the density of possible defects

Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures

An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the theory and application of the PUND technique in Metal-Ferroelectric-Dielectric-Metal (MFDM) structures by using analytical derivations and numerical simulations. In an MFDM structure the results of the PUND technique may largely differ from the polarization actually switched in the stack, which in turn is different from the remnant polarization of the underlying ferroelectric. The main hindrances that prevent PUND measurements from providing a good estimate of the polarization switching in MFDM stacks are thus discussed. The inspection of the involved physical quantities, not always accessible in experiments, provides a useful insight about the main sources of the errors in the PUND technique, and clarifies the delicate interplay between the depolarization field and the charge injection and trapping in MFDM stacks with a thin dielectric layer