Three-dimensional electronic instabilities in polymerized solid A1C60

The low-temperature structure of A1C60 (A=K, Rb) is an ordered array of polymerized C60 chains, with magnetic properties that suggest a non-metallic ground state. We study the paramagnetic state of this phase using first-principles electronic-structure methods, and examine the magnetic fluctuations around this state using a model Hamiltonian. The electronic and magnetic properties of even this polymerized phase remain strongly three dimensional, and the magnetic fluctuations favor an unusual three-dimensional antiferromagnetically ordered structure with a semi-metallic electronic spectrum.Comment: REVTeX 3.0, 10 pages, 4 figures available on request from [email protected]

Minimising the impact of disturbances in future highly-distributed power systems

It is expected that future power systems will require radical distributed control approaches to accommodate the significant expansion of renewable energy sources and other flexible grid devices. It is important to rapidly and efficiently respond to disturbances by, for example: utilising adaptive, wide-area protection schemes; proactive control of available grid resources (such as managing the fault level contribution from converter-interfaced generation) to optimise protection functionality; and taking post-fault action to ensure protection stability and optimal system operation. This paper analyses and highlights the protection functions which will be especially important to minimising the impact of disturbances in future power systems. These functions include: fast-acting wide-area protection methods using Phasor Measurement Units (PMUs); adaptive and “self-organising” protection under varying system conditions; protection with distributed Intelligent Electronic Devices (IEDs); enhanced fault ride-through; and pattern recognition based schemes. In particular, the paper illustrates how the increased availability of measurements and communications can enable improved protection functionality within distribution systems, which is especially important to accommodate the connection of highly-distributed generation at medium- and low-voltages

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin $S=1/2$ for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of $\sim$60 ns and inhomogeneous spin dephasing times of $\sim$0.3 $\mu$s, establishing relevance for quantum spin-photon interfacing.Comment: Updated version with minor correction, full Supplementary Information include

Multi-Orbital Hubbard Model in Infinite Dimensions: Quantum Monte Carlo Calculation

Using Quantum Monte Carlo we compute thermodynamics and spectra for the orbitally degenerate Hubbard model in infinite spatial dimensions. With increasing orbital degeneracy we find in the one-particle spectra: broader Hubbard bands (consistent with increased kinetic energy), a narrowing Mott gap, and increasing quasi-particle spectral weight. In opposition, Hund's rule exchange coupling decreases the critical on-site Coulomb energy for the Mott transition. The metallic regime resistivity for two-fold degeneracy is quadratic-in-temperature at low temperatures.Comment: 4 pages, 4 figures, to be published in PR

Screening, Coulomb pseudopotential, and superconductivity in alkali-doped Fullerenes

We study the static screening in a Hubbard-like model using quantum Monte Carlo. We find that the random phase approximation is surprisingly accurate almost up to the Mott transition. We argue that in alkali-doped Fullerenes the Coulomb pseudopotential $\mu^\ast$ is not very much reduced by retardation effects. Therefore efficient screening is important in reducing $\mu^{\ast}$ sufficiently to allow for an electron-phonon driven superconductivity. In this way the Fullerides differ from the conventional picture, where retardation effects play a major role in reducing the electron-electron repulsion.Comment: 4 pages RevTeX with 2 eps figures, additional material available at http://www.mpi-stuttgart.mpg.de/docs/ANDERSEN/fullerene

Inter-site Coulomb interaction and Heisenberg exchange

Based on exact diagonalization results for small clusters we discuss the effect of inter-site Coulomb repulsion in Mott-Hubbard or charge transfer insulators. Whereas the exchange constant J for direct exchange is substantially enhanced by inter-site Coulomb interaction, that for superexchange is suppressed. The enhancement of J in the single-band models holds up to the critical value for the charge density wave (CDW) instability, thus opening the way for large values of J. Single-band Hubbard models with sufficiently strong inter-site repulsion to be near a CDW instability thus may provide `physical' realizations of t-J like models with the `unphysical' parameter ratio J/t=1.Comment: Revtex file, 4 PRB pages, with 5 embedded ps-files. To appear in PRB, rapid communications. Hardcopies of figures or the entire manuscript may also be obtained by e-mail request to: [email protected]

Metal-Insulator Transitions in Degenerate Hubbard Models and Ax_xC60_{60}

Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition occurs at a critical correlation energy $U_c(N,x)=U_c(N,2N-x)=\gamma(N,x)|\bar{\epsilon}(N,x)|$, where $\bar{\epsilon}$ is the band energy per particle for the uncorrelated Fermi-liquid state and $\gamma(N,x)$ is a geometric factor which increases linearly with $x$. We propose that the alkali metal doped fullerides $A_xC_{60}$ can be described by a 3-fold degenerate Hubbard model. Using the current estimate of band width and correlation energy this implies that most of ${\rm A_xC_{60}}$, at integer $x$, are Mott-Hubbard insulators and ${\rm A_3C_{60}}$ is a strongly correlated metal.Comment: 10 pages, Revte

Electronic Structure of Superconducting Ba6c60

We report the results of first-principles electronic-structure calculations for superconducting Ba6C60. Unlike the A3C60 superconductors, this new compound shows strong Ba-C hybridization in the valence and conduction regions, mixed covalent/ionic bonding character, partial charge transfer, and insulating zero-gap band structure.Comment: 11 pages + 4 figures (1 appended, others on request), LaTeX with REVTE

Evidence for phase formation in potassium intercalated 1,2;8,9-dibenzopentacene

We have prepared potassium intercalated 1,2;8,9-dibenzopentacene films under vacuum conditions. The evolution of the electronic excitation spectra upon potassium addition as measured using electron energy-loss spectroscopy clearly indicate the formation of particular doped phases with compositions K$_x$dibenzopentacene ($x$ = 1,2,3). Moreover, the stability of these phases as a function of temperature has been explored. Finally, the electronic excitation spectra also give insight into the electronic ground state of the potassium doped 1,2;8,9-dibenzopentacene films.Comment: 6 pages, 5 figures. arXiv admin note: text overlap with arXiv:1201.200

Crystal Structures and Electronic Properties of Haloform-Intercalated C60

Using density functional methods we calculated structural and electronic properties of bulk chloroform and bromoform intercalated C60, C60 2CHX3 (X=Cl,Br). Both compounds are narrow band insulator materials with a gap between valence and conduction bands larger than 1 eV. The calculated widths of the valence and conduction bands are 0.4-0.6 eV and 0.3-0.4 eV, respectively. The orbitals of the haloform molecules overlap with the $\pi$ orbitals of the fullerene molecules and the p-type orbitals of halogen atoms significantly contribute to the valence and conduction bands of C60 2CHX3. Charging with electrons and holes turns the systems to metals. Contrary to expectation, 10 to 20 % of the charge is on the haloform molecules and is thus not completely localized on the fullerene molecules. Calculations on different crystal structures of C60 2CHCl3 and C60 2CHBr3 revealed that the density of states at the Fermi energy are sensitive to the orientation of the haloform and C60 molecules. At a charging of three holes, which corresponds to the superconducting phase of pure C60 and C60 2CHX3, the calculated density of states (DOS) at the Fermi energy increases in the sequence DOS(C60) < DOS(C60 2CHCl3) < DOS(C60 2CHBr3).Comment: 11 pages, 7 figures, 4 table