Influence of surface-related strain and electric field on acceptor wave functions in Zincblende semiconductors

The spatial distribution of the local density of states (LDOS) at Mn acceptors near the (110) surface of p-doped InAs is investigated by Scanning Tunneling Microscopy (STM). The shapes of the acceptor contrasts for different dopant depths under the surface are analyzed. Acceptors located within the first ten subsurface layers of the semiconductor show a lower symmetry than expected from theoretical predictions of the bulk acceptor wave function. They exhibit a (001) mirror asymmetry. The degree of asymmetry depends on the acceptor atoms' depths. The measured contrasts for acceptors buried below the 10th subsurface layer closely match the theoretically derived shape. Two effects are able to explain the symmetry reduction: the strain field of the surface relaxation and the tip-induced electric field.Comment: 8 pages, 4 figure

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3_3/SrTiO3_3 interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.Comment: 4 figures in main text; 4 figures in the supplemen

Controlling Silver Nanoparticle Size and Morphology with Photostimulated Synthesis

Photo-induced synthesis and control over the size and shape of colloidal silver nanoparticles is investigated in contrast to photo-stimulated aggregation of small nanoparticles into large fractal-type structures. The feasibility of light-driven nanoengineering which enables manipulation of the sizes and shapes of the isolated nanoparticles is studied by varying the amount and type of the stabilizing agent and the type of optical irradiation.Comment: 10 pages, 7 figures, 11 image

On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs

The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function - is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor.Comment: 11 pages, 8 figure

Micro-Ramps for External Compression Low-Boom Inlets

The application of vortex generators for flow control in an external compression, axisymmetric, low-boom concept inlet was investigated using RANS simulations with three-dimensional (3-D), structured, chimera (overset) grids and the WIND-US code. The low-boom inlet design is based on previous scale model 1- by 1-ft wind tunnel tests and features a zero-angle cowl and relaxed isentropic compression centerbody spike, resulting in defocused oblique shocks and a weak terminating normal shock. Validation of the methodology was first performed for micro-ramps in supersonic flow on a flat plate with and without oblique shocks. For the inlet configuration, simulations with several types of vortex generators were conducted for positions both upstream and downstream of the terminating normal shock. The performance parameters included incompressible axisymmetric shape factor, separation area, inlet pressure recovery, and massflow ratio. The design of experiments (DOE) methodology was used to select device size and location, analyze the resulting data, and determine the optimal choice of device geometry. The optimum upstream configuration was found to substantially reduce the post-shock separation area but did not significantly impact recovery at the aerodynamic interface plane (AIP). Downstream device placement allowed for fuller boundary layer velocity profiles and reduced distortion. This resulted in an improved pressure recovery and massflow ratio at the AIP compared to the baseline solid-wall configuration

Oscillatory oblique stagnation-point flow toward a plane wall

Two-dimensional oscillatory oblique stagnation-point flow toward a plane wall is investigated. The problem is a eneralisation of the steady oblique stagnation-point flow examined by previous workers. Far from the wall, the flow is composed of an irrotational orthogonal stagnation-point flow with a time-periodic strength, a simple shear flow of constant vorticity, and a time-periodic uniform stream. An exact solution of the Navier-Stokes equations is sought for which the flow streamfunction depends linearly on the coordinate parallel to the wall. The problem formulation reduces to a coupled pair of partial differential equations in time and one spatial variable. The first equation describes the oscillatory orthogonal stagnation-point flow discussed by previous workers. The second equation, which couples to the first, describes the oblique component of the flow. A description of the flow velocity field, the instantaneous streamlines, and the particle paths is sought through numerical solutions of the governing equations and via asymptotic analysis

Spintronic magnetic anisotropy

An attractive feature of magnetic adatoms and molecules for nanoscale applications is their superparamagnetism, the preferred alignment of their spin along an easy axis preventing undesired spin reversal. The underlying magnetic anisotropy barrier --a quadrupolar energy splitting-- is internally generated by spin-orbit interaction and can nowadays be probed by electronic transport. Here we predict that in a much broader class of quantum-dot systems with spin larger than one-half, superparamagnetism may arise without spin-orbit interaction: by attaching ferromagnets a spintronic exchange field of quadrupolar nature is generated locally. It can be observed in conductance measurements and surprisingly leads to enhanced spin filtering even in a state with zero average spin. Analogously to the spintronic dipolar exchange field, responsible for a local spin torque, the effect is susceptible to electric control and increases with tunnel coupling as well as with spin polarization.Comment: 6 pages with 4 figures + 26 pages of Supplementary Informatio