Stark Effect of Doped Two-Dimensional Transition Metal Dichalcogenides

The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark effect of few-layer transition metal dichalcogenides in unexpected ways. Particularly in bilayer structures, because of the competition between strong quantum confinement and intrinsic screening length, electron and hole dopings exhibit surprisingly different Stark effects: doped electrons actively screen the external field and result in a nonlinear Stark effect; however, doped holes do not effectively screen the external field, causing a linear Stark effect that is the same as that of undoped materials. Our further analysis shows that this unusual doping effect is not limited within transition metal dichalcogenides but general for 2D structures. Therefore, doping plays a much more crucial role in functional 2D devices and this unusual Stark effect also provides a new degree of freedom to tune band gaps and optical properties of 2D materials.Comment: 12 pages with 4 figure

Nanoscale capacitance: a classical charge-dipole approximation

Modeling nanoscale capacitance presents particular challenge because of dynamic contribution from electrodes, which can usually be neglected in modeling macroscopic capacitance and nanoscale conductance. We present a model to calculate capacitances of nano-gap configurations and define effective capacitances of nanoscale structures. The model is implemented by using a classical atomic charge-dipole approximation and applied to calculate capacitance of a carbon nanotube nano-gap and effective capacitance of a buckyball inside the nano-gap. Our results show that capacitance of the carbon nanotube nano-gap increases with length of electrodes which demonstrates the important roles played by the electrodes in dynamic properties of nanoscale circuits.Comment: 11 pages, 6 figure