Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation

The high pressure phase transformation behavior of silicon nanowires

Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to 11 GPa for bulk-Si. On decompression, the metallic b-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompressionL.Q.H. acknowledges her support from an Australian Government Research Training Program Scholarship. J.E.B. would like to acknowledge funding from the ARC Future Fellowship Scheme. A.L. acknowledges financial support from the Austrian Science Fund (FWF): Project No. P28175- N27 and e-beam lithography support by Manfred Reiche from the Max Planck Institute of Microstructure Physics, Halle, German

FIB Based Micro Fabrication Technique for a Novel Type of Scanning Electrochemical Microscopy Probes

Scanning Electrochemical Microscopy is a powerful technique to obtain in situ information of a wide range of processes occurring at interfaces. However, one major drawback of this technique is the lack of high spatial resolution compared with AFM or STM, due to the interference of the currents originated by the topographical and the electrochemical effects, respectively. Hence, a simultaneous but independent sensing of both, the topographical and the electrochemical information with high spatial resolution is a major issue in the field of scanning electrochemical microscopy (SECM). In this paper, we present a Focused Ion Beam (FIB) based technology, which, for the first time, enables the realization of an independent, simultaneous sensing of both the topography and the electrochemically active interfac

Studying Lattice-Based Zero-Knowlege Proofs: A Tutorial and an Implementation of Lantern

Lattice-based cryptography has emerged as a promising new candidate to build cryptographic primitives. It offers resilience against quantum attacks, enables fully homomorphic encryption, and relies on robust theoretical foundations. Zero-knowledge proofs (ZKPs) are an essential primitive for various privacy-preserving applications. For example, anonymous credentials, group signatures, and verifiable oblivious pseudorandom functions all require ZKPs. Currently, the majority of ZKP systems are based on elliptic curves, which are susceptible to attacks from quantum computers. This project presents the first implementation of Lantern, a state-of-the-art lattice-based ZKP system that can create compact proofs, which are a few dozen kilobytes large, for basic statements. We thoroughly explain the theory behind the scheme and give a full implementation in a Jupyter Notebook using SageMath to make Lantern more accessible to researchers. Our interactive implementation allows users to fully understand the scheme and its building blocks, providing a valuable resource to understand both ZKPs and lattice cryptography. Albeit not optimized for performance, this implementation allows us to construct a Module-LWE secret proof in 35s on a consumer laptop. Through our contributions, we aim to advance the understanding and practical utilization of lattice-based ZKP systems, particularly emphasizing accessibility for the broader research community

Miniaturized Wide-Range Field-Emission Vacuum Gauge

Miniaturized vacuum gauges (MVGs) for the measurement range 5.7x10-7 to 1.1x10-2 mbar were fabricated in a self-aligned approach using focused ion beam (FIB) nanomachining and reactive ion etching (RIE). The MVG consists of two properly insulated electrodes integrated on top of an atomic force microscopy (AFM) tip, forming a coaxial embodiment. The special design enables us to vary the cathode-anode separation and the turn-on voltage changes accordingly. The experiments show that the MVGs operate at low bias potential and demonstrate very good I-P dependence over a wide pressure range

In-doped Sb nanowires grown by MOCVD for high speed phase change memories

We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism. The PCM behavior of the NWs was proved, and it was shown to have relatively low reset power consumption (~ 400 μW) and fast switching capabilities with respect to standard Ge-Sb-Te based devices. In particular, reversible set and reset switches by voltage pulses as short as 25 ns were demonstrated. The obtained results are useful for understanding the effects of downscaling in PCM devices and for the exploration of innovative PCM architectures and materials

In-doped Sb nanowires grown by MOCVD for high speed phase change memories

We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism. The PCM behavior of the NWs was proved, and it was shown to have relatively low reset power consumption (~ 400 μW) and fast switching capabilities with respect to standard Ge-Sb-Te based devices. In particular, reversible set and reset switches by voltage pulses as short as 25 ns were demonstrated. The obtained results are useful for understanding the effects of downscaling in PCM devices and for the exploration of innovative PCM architectures and materials. Keywords: Phase change memories, Nanowires, MOCVD, In-Sb, TEM, XR