Large Polarization and Susceptibilities in Artificial Morphotropic Phase Boundary PbZr1−xTixO3 Superlattices

The ability to produce atomically precise, artificial oxide heterostructures allows for the possibility of producing exotic phases and enhanced susceptibilities not found in parent materials. Typical ferroelectric materials either exhibit large saturation polarization away from a phase boundary or large dielectric susceptibility near a phase boundary. Both large ferroelectric polarization and dielectric permittivity are attained wherein fully epitaxial (PbZr0.8Ti0.2O3)n/(PbZr0.4Ti0.6O3)2n (n = 2, 4, 6, 8, 16 unit cells) superlattices are produced such that the overall film chemistry is at the morphotropic phase boundary, but constitutive layers are not. Long- (n ≥ 6) and short-period (n = 2) superlattices reveal large ferroelectric saturation polarization (Ps = 64 µC cm−2) and small dielectric permittivity (εr ≈ 400 at 10 kHz). Intermediate-period (n = 4) superlattices, however, exhibit both large ferroelectric saturation polarization (Ps = 64 µC cm−2) and dielectric permittivity (εr = 776 at 10 kHz). First-order reversal curve analysis reveals the presence of switching distributions for each parent layer and a third, interfacial layer wherein superlattice periodicity modulates the volume fraction of each switching distribution and thus the overall material response. This reveals that deterministic creation of artificial superlattices is an effective pathway for designing materials with enhanced responses to applied bias

Surface effects on the Mott-Hubbard transition in archetypal V2_2O3_3

We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density functional theory plus dynamical mean field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic surface states, explaining our experimental observations.Comment: 5 pages, 4 figure

Electrodynamics of superconducting pnictide superlattices

It has been recently reported (S. Lee et al., Nature Materials 12, 392, 2013) that superlattices where layers of the 8% Co-doped BaFe2As2 superconducting pnictide are intercalated with non superconducting ultrathin layers of either SrTiO3 or of oxygen-rich BaFe2As2, can be used to control flux pinning, thereby increasing critical fields and currents, without significantly affecting the critical temperature of the pristine superconducting material. However, little is known about the electron properties of these systems. Here we investigate the electrodynamics of these superconducting pnictide superlattices in the normal and superconducting state by using infrared reflectivity, from THz to visible range. We find that multi-gap structure of these superlattices is preserved, whereas some significant changes are observed in their electronic structure with respect to those of the original pnictide. Our results suggest that possible attempts to further increase the flux pinning may lead to a breakdown of the pnictide superconducting properties.Comment: 4 pages, two figure

Evidence of a pressure-induced metallization process in monoclinic VO2_2

Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO$_2$ at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*$\sim$10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P$>$P*. Differently from ambient pressure, where the VO$_2$ metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO$_2$.Comment: 5 pages, 3 figure

Pressure dependence of the charge-density-wave gap in rare-earth tri-tellurides

We investigate the pressure dependence of the optical properties of CeTe$_3$, which exhibits an incommensurate charge-density-wave (CDW) state already at 300 K. Our data are collected in the mid-infrared spectral range at room temperature and at pressures between 0 and 9 GPa. The energy for the single particle excitation across the CDW gap decreases upon increasing the applied pressure, similarly to the chemical pressure by rare-earth substitution. The broadening of the bands upon lattice compression removes the perfect nesting condition of the Fermi surface and therefore diminishes the impact of the CDW transition on the electronic properties of $R$Te$_3$.Comment: 5 pages, 4 figure

Intense terahertz pulses from SPARC-LAB coherent radiation source

The linac-based Terahertz source at the SPARC_LAB test facility is able to gene rate highly intense Terahertz broadband pulses via coherent transition radiation (CTR) from high brightness electron beams. The THz pulse duration is typically down to 100 fs RMS and can be tuned through the electron bunch duration and shaping. The measured stored energy in a single THz pulse has reached 40 μ J, which corresponds to a peak electric field of 1.6 MV/cm at the THz focus. Here we present the main features, in particular spatial and sp ectral distributions and energy characterizations of the SPARC_LAB THz source, which is very competitive for investigations in Condensed Matter, as well as a valid tool for electron beam longitudinal diagnostics

Transmittance and reflectance measurements at terahertz frequencies on a superconducting BaFe_{1.84}Co_{0.16}As_2 ultrathin film: an analysis of the optical gaps in the Co-doped BaFe_2As_2 pnictide

Here we report an optical investigation in the terahertz region of a 40 nm ultrathin BaFe$_{1.84}$Co$_{0.16}$As$_2$ superconducting film with superconducting transition temperature T$_c$ = 17.5 K. A detailed analysis of the combined reflectance and transmittance measurements showed that the optical properties of the superconducting system can be described in terms of a two-band, two-gap model. The zero temperature value of the large gap $\Delta_B$, which seems to follow a BCS-like behavior, results to be $\Delta_B$(0) = 17 cm$^{-1}$. For the small gap, for which $\Delta_A$(0) = 8 cm$^{-1}$, the temperature dependence cannot be clearly established. These gap values and those reported in the literature for the BaFe$_{2-x}$Co$_{x}$As$_2$ system by using infrared spectroscopy, when put together as a function of T$_c$, show a tendency to cluster along two main curves, providing a unified perspective of the measured optical gaps. Below a temperature around 20 K, the gap-sizes as a function of T$_c$ seem to have a BCS-like linear behavior, but with different slopes. Above this temperature, both gaps show different supra-linear behaviors

Electrodynamics near the Metal-to-Insulator Transition in V3O5

The electrodynamics near the metal-to-insulator transitions (MIT) induced, in V3O5 single crystals, by both temperature (T) and pressure (P) has been studied by infrared spectroscopy. The T- and P-dependence of the optical conductivity may be explained within a polaronic scenario. The insulating phase at ambient T and P corresponds to strongly localized small polarons. Meanwhile the T-induced metallic phase at ambient pressure is related to a liquid of polarons showing incoherent dc transport, in the P-induced metallic phase at room T strongly localized polarons coexist with partially delocalized ones. The electronic spectral weight is almost recovered, in both the T and P induced metallization processes, on an energy scale of 1 eV, thus supporting the key-role of electron-lattice interaction in the V3O5 metal-to-insulator transition.Comment: 7 pages, 5 figure