Für eine pragmatische Politik der Steuervereinfachung: Ein Darmstädter Entwurf

Steuervereinfachungen sind en vogue. Die bisherigen großen Würfe wie der „Karlsruher Entwurf“ oder der „Heidelberger Entwurf“ zur Einkommen- bzw. Einfachsteuer dürften indes geringe Chancen auf politische Umsetzung haben. Kilian Bizer und Jürgen Lyding stellen den „Darmstädter Entwurf“ für eine pragmatische Politik der Steuervereinfachung vor. --

Direct measurements of magnetostrictive process in amorphous wires using scanning tunneling microscopy

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.We demonstrate a versatile capability to measure directly the magnetostrictive properties through the magnetization process on a nanometric scale using a modified scanning tunneling microscope. Single 10 mm long, 125 μm diam amorphouswires of both positive and negative magnetostriction have been studied and the data are compared with the hysteretic loops determined by both ac and SQUID magnetic measurements. This improved technique promises interesting possibilities, from both fundamental and applications points of view, in a number of scientific disciplines especially of interest in life and environmental sciences

Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunnelling microscopy

We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2x1:H surface. Room temperature, ultra-high vacuum (UHV) tunnelling spectroscopy measurements of nanometer-sized single-layer graphene reveal a size dependent energy gap ranging from 0.1-1 eV. Furthermore, the number of graphene layers can be directly determined from scanning tunnelling microscopy (STM) topographic contours. This atomistic study provides an experimental basis for probing the electronic structure of nanometer-sized graphene which can assist the development of graphene-based nanoelectronics.Comment: Accepted for publication in Nanotechnolog

Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces

The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate ($R$) decreases several orders of magnitude when the substrate temperature is increased from 300 K to 610 K. This is most noticeable at a bias voltage of -7 V where $R$ decreases by a factor of ~200 for a temperature change of 80 K, whilst it only decreases by a factor of ~3 at -5 V upon the same temperature change. The experimental data can be explained by desorption due to vibrational heating by inelastic scattering via a hole resonance. This theory predicts a weak suppression of desorption with increasing temperature due to a decreasing vibrational lifetime, and a strong bias dependent suppression due to a temperature dependent lifetime of the hole resonance.Comment: 5 pages, RevTeX, epsf files. Accepted for surface science letter

The PAIS? Corpus of Italian Web Texts

PAISA\u27 is a Creative Commons licensed, large web corpus of contemporary Italian. We describe the design, harvesting, and processing steps involved in its creation

Soliton effects in dangling-bond wires on Si(001)

Dangling bond wires on Si(001) are prototypical one dimensional wires, which are expected to show polaronic and solitonic effects. We present electronic structure calculations, using the tight binding model, of solitons in dangling-bond wires, and demonstrate that these defects are stable in even-length wires, although approximately 0.1 eV higher in energy than a perfect wire. We also note that in contrast to conjugated polymer systems, there are two types of soliton and that the type of soliton has strong effects on the energetics of the bandgap edges, with formation of intra-gap states between 0.1 eV and 0.2 eV from the band edges. These intra-gap states are localised on the atoms comprising the soliton.Comment: 6 pages, 3 figures, 3 tables, submitted to Phys. Rev.

Towards the fabrication of phosphorus qubits for a silicon quantum computer

The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of such devices however requires atomic scale manipulation - an immense technological challenge. We demonstrate that it is possible to fabricate an atomically-precise linear array of single phosphorus bearing molecules on a silicon surface with the required dimensions for the fabrication of a silicon-based quantum computer. We also discuss strategies for the encapsulation of these phosphorus atoms by subsequent silicon crystal growth.Comment: To Appear in Phys. Rev. B Rapid Comm. 5 pages, 5 color figure

STM induced hydrogen desorption via a hole resonance

We report STM-induced desorption of H from Si(100)-H(2$\times1$) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5$\sigma$ hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.Comment: 4 pages, 4 figures. To appear in Phys. Rev. Let