Optical signatures of a fully dark exciton condensate

We propose optical means to reveal the presence of a dark exciton condensate that does not yield any photoluminescence at all. We show that (i) the dark exciton density can be obtained from the blueshift of the excitonic absorption line induced by dark excitons; (ii) the polarization of the dark condensate can be deduced from the blueshift dependence on probe photon polarization and also from Faraday effect, linearly polarized dark excitons leaving unaffected the polarization plane of an unabsorbed photon beam. These effects result from carrier exchanges between dark and bright excitons.Comment: 5 pages, 4 figure

Effects of fermion exchanges on the polarization of exciton condensates

Exchange processes are responsible for the stability of elementary boson condensates with respect to their possible fragmentation. This remains true for composite bosons when single fermion exchanges are included but spin degrees of freedom are ignored. We here show that their inclusion can produce a "spin-fragmentation" of a condensate of dark excitons, i.e., an unpolarized condensate with equal amount of dark excitons with spins (+2) and (-2). Quite surprisingly, for spatially indirect excitons of semiconductor bilayers, we predict that the condensate polarization can switch from unpolarized to fully polarized, depending on the distance between the layers confining electrons and holes. Remarkably, the threshold distance associated to this switching lies in the regime where experiments are nowadays carried out.Comment: 5 pages, 1 figur

From Strong to Weak Coupling Regime in a Single GaN Microwire up to Room Temperature

Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanostructure. The demonstration relies on a method which doesn't require any knowledge \'a priori on the photonic eigenmodes energy in the microwire, i.e. the details of the microwire cross-section shape. Moreover, using a heavily doped segment within the same microwire, we confirm experimentally that free excitons provide the oscillator strength for this strong coupling regime. The measured Rabi splitting to linewidth ratio of 15 matches state of the art planar Nitride-based microcavities, in spite of a much simpler design and a less demanding fabrication process. These results show that GaN microwires constitute a simpler and promising system to achieve electrically pumped lasing in the strong coupling regime.Comment: 14 pages, 4 figure

Controlling the charge environment of single quantum dots in a photonic-crystal cavity

We demonstrate that the presence of charge around a semiconductor quantum dot (QD) strongly affects its optical properties and produces non-resonant coupling to the modes of a microcavity. We first show that, besides (multi)exciton lines, a QD generates a spectrally broad emission which efficiently couples to cavity modes. Its temporal dynamics shows that it is related to the Coulomb interaction between the QD (multi)excitons and carriers in the adjacent wetting layer. This mechanism can be suppressed by the application of an electric field, making the QD closer to an ideal two-level system.Comment: 12 pages, 4 figure

Quantum magnetism and counterflow supersolidity of up-down bosonic dipoles

We study a gas of dipolar Bosons confined in a two-dimensional optical lattice. Dipoles are considered to point freely in both up and down directions perpendicular to the lattice plane. This results in a nearest neighbor repulsive (attractive) interaction for aligned (anti-aligned) dipoles. We find regions of parameters where the ground state of the system exhibits insulating phases with ferromagnetic or anti-ferromagnetic ordering, as well as with rational values of the average magnetization. Evidence for the existence of a novel counterflow supersolid quantum phase is also presented.Comment: 8 pages, 6 figure

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate.

The lateral ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a function of growth rate, using the Hopkins-Skellam index (HSI). Coherent QD arrays have a spatial distribution which is neither random nor ordered, but intermediate. The lateral ordering improves as the growth rate is increased and can be explained by more spatially regular nucleation as the QD density increases. By contrast, large and irregular 3D islands are distributed randomly on the surface. This is consistent with a random selection of the mature QDs relaxing by dislocation nucleation at a later stage in the growth, independently of each QD's surroundings. In addition we explore the statistical variability of the HSI as a function of the number N of spatial points analysed, and we recommend N > 10(3) to reliably distinguish random from ordered arrays