3,410 research outputs found

    A study of the Haor areas of Sylhet-Mymensing districts with ERTS imageries (winter crop estimation)

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    There are no author-identified significant results in this report

    A new species of the genus Gomphomastax Brunner von Wattenwyl (Orthoptera: Eumastacidae: Gomphomastacinae) from Indian Kashmir

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    A new species, Gomphomastax nigrovittata Usmani, from Kashmir is described and illustrated. In addition to conventional morphological characters, genitalic structures are also studied. A key to known species of Gomphomastax from Indian Kashmir is given

    Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects

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    Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.Comment: 4 pages, ICEDSA 2012 conferenc

    A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET

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    In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D Poisson's equation with appropriate boundary conditions, incorporating Young's parabolic approximation. The proposed model illustrates excellent match with the experimental results for both n-channel and p-channel 180nm Flexible-FETs. Threshold voltage variation with several important device parameters (oxide and silicon channel thickness, doping concentration) is observed which yields qualitative matching with results obtained from SILVACO simulations.Comment: 4 pages, EIT 2012-IUPUI conferenc

    Mobile Computing in Physics Analysis - An Indicator for eScience

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    This paper presents the design and implementation of a Grid-enabled physics analysis environment for handheld and other resource-limited computing devices as one example of the use of mobile devices in eScience. Handheld devices offer great potential because they provide ubiquitous access to data and round-the-clock connectivity over wireless links. Our solution aims to provide users of handheld devices the capability to launch heavy computational tasks on computational and data Grids, monitor the jobs status during execution, and retrieve results after job completion. Users carry their jobs on their handheld devices in the form of executables (and associated libraries). Users can transparently view the status of their jobs and get back their outputs without having to know where they are being executed. In this way, our system is able to act as a high-throughput computing environment where devices ranging from powerful desktop machines to small handhelds can employ the power of the Grid. The results shown in this paper are readily applicable to the wider eScience community.Comment: 8 pages, 7 figures. Presented at the 3rd Int Conf on Mobile Computing & Ubiquitous Networking (ICMU06. London October 200
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