1,644 research outputs found

    Some New Integral Inequalities for Several Kinds of Convex Functions

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    In this study, we obtain some new integral inequalities for different classes of convex functions by using some elementary inequalities and classical inequalities like general Cauchy inequality and Minkowski inequality

    Ultimate limits to inertial mass sensing based upon nanoelectromechanical systems

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    Nanomechanical resonators can now be realized that achieve fundamental resonance frequencies exceeding 1 GHz, with quality factors (Q) in the range 10^3<=Q<=10^5. The minuscule active masses of these devices, in conjunction with their high Qs, translate into unprecedented inertial mass sensitivities. This makes them natural candidates for a variety of mass sensing applications. Here we evaluate the ultimate mass sensitivity limits for nanomechanical resonators operating in vacuo that are imposed by a number of fundamental physical noise processes. Our analyses indicate that nanomechanical resonators offer immense potential for mass sensing—ultimately with resolution at the level of individual molecules

    Nanoelectromechanical systems

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    Nanoelectromechanical systems (NEMS) are drawing interest from both technical and scientific communities. These are electromechanical systems, much like microelectromechanical systems, mostly operated in their resonant modes with dimensions in the deep submicron. In this size regime, they come with extremely high fundamental resonance frequencies, diminished active masses,and tolerable force constants; the quality (Q) factors of resonance are in the range Q~10^3–10^5—significantly higher than those of electrical resonant circuits. These attributes collectively make NEMS suitable for a multitude of technological applications such as ultrafast sensors, actuators, and signal processing components. Experimentally, NEMS are expected to open up investigations of phonon mediated mechanical processes and of the quantum behavior of mesoscopic mechanical systems. However, there still exist fundamental and technological challenges to NEMS optimization. In this review we shall provide a balanced introduction to NEMS by discussing the prospects and challenges in this rapidly developing field and outline an exciting emerging application, nanoelectromechanical mass detection

    Balanced electronic detection of displacement in nanoelectromechanical systems

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    We describe a broadband radio frequency balanced bridge technique for electronic detection of displacement in nanoelectromechanical systems (NEMS). With its two-port actuation-detection configuration, this approach generates a background-nulled electromotive force in a dc magnetic field that is proportional to the displacement of the NEMS resonator. We demonstrate the effectiveness of the technique by detecting small impedance changes originating from NEMS electromechanical resonances that are accompanied by large static background impedances at very high frequencies. This technique allows the study of important experimental systems such as doped semiconductor NEMS and may provide benefits to other high frequency displacement transduction circuits

    Inflation risk and default risk in a dynamic general equilibrium asset pricing model for an emerging market economy

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    Cataloged from PDF version of article.In this thesis, the difference between the T-Bill returns and common stock returns in Turkey is examined. It is observed that there is a bond premium in Turkey unlike the equity premium observed in developed countries. To understand this surprising observation, inflation-risk and default-risk are incorporated to the Mehra-Presscott (1985) dynamic asset pricing model. Inflation-risk alone is found to be insufficient to explain this bond premium. Only after allowing for a perceived default-risk, the observed bond premium of Turkish T-Bills over Turkish common stocks can be explained by such a model.Ekinci, M FatihM.S

    Comment on "Evidence for Quantized Displacement in Macroscopic Nanomechanical Oscillators"

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    In a recent Letter, Gaidarzhy et al. [1] claim to have observed evidence for "quantized displacements" of a high-order mode of a nanomechanical oscillator. We contend that the methods employed by the authors are unsuitable in principle to observe such states for any harmonic mode

    Monocrystalline silicon carbide nanoelectromechanical systems

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    SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators

    Early stage morphology of quench condensed Ag, Pb and Pb/Ag hybrid films

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    Scanning Tunneling Microscopy (STM) has been used to study the morphology of Ag, Pb and Pb/Ag bilayer films fabricated by quench condensation of the elements onto cold (T=77K), inert and atomically flat Highly Oriented Pyrolytic Graphite (HOPG) substrates. All films are thinner than 10 nm and show a granular structure that is consistent with earlier studies of QC films. The average lateral diameter, 2rˉ\bar {2r}, of the Ag grains, however, depends on whether the Ag is deposited directly on HOPG (2rˉ\bar {2r} = 13 nm) or on a Pb film consisting of a single layer of Pb grains (2rˉ\bar {2r} = 26.8 nm). In addition, the critical thickness for electrical conduction (dGd_{G}) of Pb/Ag films on inert glass substrates is substantially larger than for pure Ag films. These results are evidence that the structure of the underlying substrate exerts an influence on the size of the grains in QC films. We propose a qualitative explanation for this previously unencountered phenomenon.Comment: 11 pages, 3 figures and one tabl

    Intrinsic dissipation in high-frequency micromechanical resonators

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    We report measurements of intrinsic dissipation in micron-sized suspended resonators machined from single crystals of galium arsenide and silicon. In these experiments on high-frequency micromechanical resonators, designed to understand intrinsic mechanisms of dissipation, we explore dependence of dissipation on temperature, magnetic field, frequency, and size. In contrast to most of the previous measurements of acoustic attenuation in crystalline and amorphous structures in this frequency range, ours is a resonant measurement; dissipation is measured at the natural frequencies of structural resonance, or modes of the structure associated with flexural and torsional motion. In all our samples we find a weakly temperature dependent dissipation at low temperatures. We compare and contrast our data to various probable mechanisms, including thermoelasticity, clamping, anharmonic mode-coupling, surface anisotropy and defect motion, both in bulk and on surface. The observed parametric dependencies indicate that the internal defect motion is the dominant mechanism of intrinsic dissipation in our samples
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