635 research outputs found
Complex Data Modelling Using Likelihood and H-Likelihood Methods
An important inference framework in statistical methods is based on the likelihood
function. First we will review the likelihood theory for independent observations.
Then we use correlated data likelihood modeling concepts to introduce the
h-likelihood framework
La ceràmica de procedència sud-itàlica del Museu Episcopal de Vic
En aquest article s’estudien tretze vasos ceràmics procedents del sud d’Itàlia que formen part de la col·lecció de ceràmiques gregues, etrusques, falisques i sud-itàliques del Museu Episcopal de Vic (MEV). Es tracta d’un conjunt homogeni pel que fa a l’origen geogràfic, ja que tots els exemplars provenen de l’Apúlia preromana, avui regió de la Pulla. Els vasos abasten un ventall cronològic que va de mitjan s. v aC a les darreries del s. iv aC i es classifiquen en cinc tipus: 1. indígena geomètrica; 2. indígena d’imitació grega; 3. italiota de figures roges; 4. vernís negre; 5. de Gnàthia.
This article studies thirteen ceramic vases that originate in the South of Italy and are part of a collection of Greek, Etruscan, Faliscan and South Italic pottery on display here at the Museu Episcopal de Vic. Since all the pieces come from pre-Roman Apulia (nowadays known as Puglia) the collection shares the same geographical origin. Chronologically, the vases range from the mid 5th century BC to the end of the 4th century BC and can thus be classified as follows: 1. local geometric, 2. local imitating Greek, 3. Italiot red-figured, 4. black-glazed, 5. Gnathian
La ceràmica grega, falisco-capenate i etrusca del Museu Episcopal de Vic
En aquest article s’estudien els vasos grecs, falisco-capenate i etruscs que, juntament amb els sud-itàlics, formen la col·lecció de ceràmiques preromanes del Museu Episcopal de Vic (MEV) que pertanyen a cultures mediterrànies d’àmbit hel·lènic o que hi estan relacionades. Els trenta-set vasos abasten un ventall cronològic que va des de mitjan s. vii aC fins a la primera meitat del s. iv aC i es classifiquen en deu tipus: 1. coríntia; 2. àtica de figures negres; 3. àtica de figures roges; 4. àtica de vernís negre; 5. falisco-capenate; 6. etruscocoríntia; 7. etrusca de bucchero; 8. etrusca de figures negres; 9. etrusca de figures roges, i 10. de fabricació incerta.
This article looks at Greek, Falisco-Capenate and Etruscan vases which, along with items from southern Italy, make up the Museu Episcopal de Vic’s collection of pre-Roman pottery belonging to the Mediterranean Hellenic culture or related to it. The 37 vases cover a period ranging from the mid 7th century to mid 4th century B.C., and are classified into ten different categories: 1. Corinthian; 2. Attic black-figures; 3. Attic red figures; 4. Attic black-glaze; 5. Falisco-Capenate; 6. Etrusco-Corinthian; 7. Etruscan bucchero-ware; 8. Etruscan black-figures; 9. Etruscan red-figures, and 10. those of uncertain manufacture
Las hijas de Eva : historia, tradición, simbología, Inés Calero Secall y Virginia Alfaro Bech (coords.)
Obra ressenyada: Inés CALERO SECALL y Virginia ALFARO BECH (coords.), Las hijas de Eva: historia, tradición y simbología. Málaga: Centro de Ediciones de la Diputación de Málaga (CEDMA), 2006
Calero Secall, Inés y Alfaro Bech, Virginia (coords.), Las hijas de Eva: historia, tradición y simbología
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
A simple and highly reproducible single electron transistor (SET) has been
fabricated using gated silicon nanowires. The structure is a
metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator
thin films. The channel of the transistor is the Coulomb island at low
temperature. Two silicon nitride spacers deposited on each side of the gate
create a modulation of doping along the nanowire that creates tunnel barriers.
Such barriers are fixed and controlled, like in metallic SETs. The period of
the Coulomb oscillations is set by the gate capacitance of the transistor and
therefore controlled by lithography. The source and drain capacitances have
also been characterized. This design could be used to build more complex SET
devices.Comment: to be published in Applied Physics Letter
Quadexciton cascade and fine structure splitting of the triexciton in a single quantum dot
We report the properties of emission lines associated with the cascaded
recombination of a quadexciton in single GaAlAs/AlAs quantum dots, studied by
means of polarization-resolved photoluminescence and single-photon correlation
experiments. It is found that photons which are emitted in a double-step 4X-3X
process preserve their linear polarization, similarly to the case of conserved
polarization of correlated photons in the 2X-X cascade. In contrast, an
emission of either co-linear or cross-linear pairs of photons is observed for
the 3X-2X cascade. Each emission line associated with the quadexciton cascade
shows doublet structure in the polarization-resolved photoluminescence
experiment. The maximum splitting is seen when the polarization axis is chosen
along and perpendicular to the [110] crystallographic direction. This effect is
ascribed to the fine structure splitting of the exciton and triexciton states
in the presence of an anisotropic confining potential of ae dot. We also show
that the splitting in the triexciton state surpasses that in the exciton state
by a factor up to eight and their ratio scales with the energy distance between
the 3X and X emission lines, thus, very likely, with a lateral size and/or a
composition of the dot.Comment: submitted to Physical Review
Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed
in a silicon nanowire. These anomalies are attributed to electrostatic
interaction with charge traps in the device. A simple model reproduces these
anomalies accurately and we show how the capacitance matrices of the traps can
be obtained from the shape of the anomalies. From these capacitance matrices we
deduce that the traps are located near or inside the wire. Based on the
occurrence of the anomalies in wires with different doping levels we infer that
most of the traps are arsenic dopant states. In some cases the anomalies are
accompanied by a random telegraph signal which allows time resolved monitoring
of the occupation of the trap. The spin of the trap states is determined via
the Zeeman shift.Comment: 9 pages, 8 figures, v2: section on RTS measurements added, many
improvement
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