Spin coherence of holes in GaAs/AlGaAs quantum wells

The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations. Fast oscillating electron spin beats decay with the radiative lifetime of the charged exciton of 50 ps. Long lived spin coherence of the holes with dephasing times up to 650 ps. The spin dephasing time as well as the in-plane hole g factor show strong temperature dependence, underlining the importance of hole localization at cryogenic temperatures.Comment: 5 pages, 4 figures in PostScript forma

Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10-band k.p modeling

Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 m(o) in QWs with 1.2% N and 0.15 m(o) for the case of larger N content of 2.2%.Publisher PDFPeer reviewe

Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range

Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.Publisher PD

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

We would like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.Publisher PDFPeer reviewe

Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures

The work has supported by the European Commission within the Project WideLase (No. 318798) of the 7-th Framework Programme and by the National Science Center of Poland by the Grant No. 2014/15/B/ST7/04663.We present a characterization of doped InAs layers in interband cascade lasers exploiting the plasmon-enhanced waveguiding. Fast differential reflectance was employed in order to identify the plasma-edge frequency via the Berreman effect and shown as an advantageous method when compared to other types of measurements. The carrier concentration was then derived and compared with the nominal doping densities. The emission properties of the investigated structures were studied by means of photoluminescence (PL). Its full-width at half-maximum and integrated intensity were extracted from PL spectra and analyzed in the function of the doping density (carrier concentration). The PL linewidth was found to be independent of the carrier concentration indicating an insignificant contribution of doping to the structural properties deterioration. The PL intensity decay with the carrier concentration suggests being dominated by Auger recombination losses.PostprintPeer reviewe

Long-lived electron spin coherence in CdSe/ZnSSe self-assembled quantum dots

The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-doped quantum dots, outlasting significantly the lifetimes of charge neutral and negatively charged excitons of 350 - 530 ps. The electron spin dephasing time as long as 5.6 ns has been measured in a magnetic field of 0.25 T. Hyperfine interaction of resident electrons with a nuclear spin fluctuations is suggested as the main limiting factor for the dephasing time. The efficiency of this mechanism in II-VI and III-V quantum dots is analyzed.Comment: 9 pages, 7 figures, 1 tabl

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

This research was supported by the National Science Center of Poland within Grant No. 2011/02/A/ST3/00152.We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.PostprintPublisher PDFPeer reviewe

Towards the Application of Atorvastatin to Intensify Proapoptotic Potential of Conventional Antileukemic Agents In Vitro

It has been previously revealed that statins used at high concentrations display antileukemic potential towards chronic lymphocytic leukemia (CLL) cells. However, their usage alone in clinical practice may be limited due to possible side effects of high doses of these drugs. On the other hand, combined treatment of leukemia with statins and the conventional chemotherapeutics is questionable because of unknown influence of the first on the standard treatment results. This study has revealed that in vitro atorvastatin increases the proapoptotic potential of cladribine and mafosfamide in CLL cells isolated from peripheral blood of patients. Moreover, a preincubation with the above statin sensitizes leukemic cells to CM-induced apoptosis even at small concentrations of the drug. The usage of atorvastatin together with or followed by the conventional chemotherapy should be considered as therapeutic option for the treatment for this leukemia. Interestingly, CM-resistant patients might have the biggest benefits from atorvastatin administration.Grant no. 1407 from the University of Łódź