Terahertz quantum plasmonics at nanoscales and angstrom scales

Through the manipulation of metallic structures, light-matter interaction can enter into the realm of quantum mechanics. For example, intense terahertz pulses illuminating a metallic nanotip can promote terahertz field-driven electron tunneling to generate enormous electron emission currents in a subpicosecond time scale. By decreasing the dimension of the metallic structures down to the nanoscale and angstrom scale, one can obtain a strong field enhancement of the incoming terahertz field to achieve atomic field strength of the order of V/nm, driving electrons in the metal into tunneling regime by overcoming the potential barrier. Therefore, designing and optimizing the metal structure for high field enhancement are an essential step for studying the quantum phenomena with terahertz light. In this review, we present several types of metallic structures that can enhance the coupling of incoming terahertz pulses with the metals, leading to a strong modification of the potential barriers by the terahertz electric fields. Extreme nonlinear responses are expected, providing opportunities for the terahertz light for the strong light-matter interaction. Starting from a brief review about the terahertz field enhancement on the metallic structures, a few examples including metallic tips, dipole antenna, and metal nanogaps are introduced for boosting the quantum phenomena. The emerging techniques to control the electron tunneling driven by the terahertz pulse have a direct impact on the ultrafast science and on the realization of next-generation quantum devices

Strategic Asset Seeking and Innovation Performance: The Role of Innovation Capabilities and Host Country Institutions

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Flux Noise in MgB2 Thin Films

We have performed flux noise and AC-susceptibility measurements on two 400 nm thick MgB$_2$ films. Both measurement techniques give information about the vortex dynamics in the sample, and hence the superconducting transition, and can be linked to each other through the fluctuation-dissipation-theorem. The transition widths for the two films are 0.3 and 0.8 K, respectively, and the transitions show a multi step-like behavior in the AC-susceptibility measurements. The same phenomenon is observed in the flux noise measurements through a change in the frequency dependence of the spectral density at each step in the transition. The results are discussed and interpreted in terms of vortices carrying an arbitrary fraction of a flux quantum as well as in terms of different macroscopic regions in the films having slightly different compositions, and hence, different critical temperatures.Comment: 8 pages, 4 figures, conference contribution to "Fluctuations and Noise", Santa Fe, New mexico 1-4 june 200

MgB2 superconducting thin films with a transition temperature of 39 Kelvin

We report the growth of high-quality c-axis-oriented epitaxial MgB2 thin films by using a pulsed laser deposition technique. The thin films grown on (1`1 0 2) Al2O3 substrates show a Tc of 39 K. The critical current density in zero field is ~ 6 x 10^6 A/cm2 at 5 K and ~ 3 x 10^5 A/cm^2 at 35 K, suggesting that this compound has great potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, X-ray diffraction patterns indicate a highly c-axis-oriented crystal structure perpendicular to the substrate surface.Comment: 3 pages and 3 figure

Growth of superconducting MgB2 thin films via postannealing techniques

We report the effect of annealing on the superconductivity of MgB2 thin films as functions of the postannealing temperature in the range from 700 C to 950 C and of the postannealing time in the range from 30 min to 120 min. On annealing at 900 C for 30 min, we obtained the best-quality MgB2 films with a transition temperature of 39 K and a critical current density of ~ 10^7 A/cm^2. Using the scanning electron microscopy, we also investigated the film growth mechanism. The samples annealed at higher temperatures showed the larger grain sizes, well-aligned crystal structures with preferential orientations along the c-axis, and smooth surface morphologies. However, a longer annealing time prevented the alignment of grains and reduced the superconductivity, indicating a strong interfacial reaction between the substrate and the MgB2 film.Comment: 7 pages, 4 figures include

Universal scaling of the Hall resistivity in MgB2 superconductors

The mixed-state Hall resistivity and the longitudinal resistivity in superconducting MgB2 thin films have been investigated as a function of the magnetic field over a wide range of current densities from 100 to 10000 A/cm^2. We observe a universal Hall scaling behavior with a constant exponent of 2.0, which is independent of the magnetic field, the temperature, and the current density. This result can be interpreted well within the context of recent theories.Comment: 4 page