118 research outputs found

    Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs

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    On the Integral Representations of Electrical Characteristics in Si Devices

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    Modeling and simulation of single- and multiple-gate 2-D MESFET's

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    We describe a physically based model for a two-dimensional (2-D) MESFET, a novel hetero-dimensional transistor, The model is valid for a "single" gate in which the sidewall contacts are biased together, a dual-gate configuration in which the gates are biased independently, and a multiple-gate configuration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE, The modeling results are in good agreement with the experimental data
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