Effective Index Method Applied on a GaN/InxGa1-XN Integrated Optics Waveguide

Link to publisher's homepage at http://ijneam.unimap.edu.myEffective index is a refractive index which depends not only on the wavelength but also on the mode in which the light propagates. It depends on the structural shape of the waveguide, mainly on its physical dimensions which restrain the light propagation introducing the optical confinement. For this reason a specific method have been developed to evaluate the effective refractive index of waveguides made by a particular wide gap III-Nitrides InxGa1-xN semiconductor in order to propose a convenient light propagation device since their laser diodes are a reality nowadays and constitutes a first step to develop future all-optical devices. Independently of the wavelength, the smaller is the guiding structure the earlier fundamental and then secondary modes appear

Finite Elements Method Coupled with Delaunay Triangulation Method Applied on a Silicon Corner Diode

International audienceThis work considers a two dimensional numerical device simulation system using a novel digitizing scheme based on finite elements coupled with the Delaunay triangulation method which allowed an optimal mesh involved in nonrectangular devices as a corner diode. A grid was generated automatically according to the specified device geometry standing on the Delaunay triangulation process. The solution of the problem consists in the resolution of three strong nonlinear partial differential equations (PDE) which are, in occurrence, two dimensional Poisson and continuity equations. Modeled voltage, free carriers distribution and I-V characteristics were extracted when the PN junction resolution was based on second-order Bezier curves. The results are presented using a Delaunay triangulation meshing mathematical tool

Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process

International audienc

Finite Elements Method Coupled with Delaunay Triangulation Method Applied on a Silicon Corner Diode

International audienceThis work considers a two dimensional numerical device simulation system using a novel digitizing scheme based on finite elements coupled with the Delaunay triangulation method which allowed an optimal mesh involved in nonrectangular devices as a corner diode. A grid was generated automatically according to the specified device geometry standing on the Delaunay triangulation process. The solution of the problem consists in the resolution of three strong nonlinear partial differential equations (PDE) which are, in occurrence, two dimensional Poisson and continuity equations. Modeled voltage, free carriers distribution and I-V characteristics were extracted when the PN junction resolution was based on second-order Bezier curves. The results are presented using a Delaunay triangulation meshing mathematical tool