3,223 research outputs found

    Self injection of Dichlorvos, an Organophosphorus Compound

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    We report two patients who injected themselves a strong organophosphate compound, dichlorvas, and showed the typical clinical picture of organophosphate intoxication. There are very few case reports of parenteral organophosphorous poisoning. With the appropriate therapy, their symptoms disappeared in a few days. The cases are reported because of unusual and interesting way of intoxication

    Performance enhancement for crystallization unit of a sugar plant using genetic algorithm technique

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    This paper deals with the performance enhancement for crystallization unit of a sugar plant using genetic algorithm. The crystallization unit of a sugar industry has three main subsystems arranged in series. Considering exponential distribution for the probable failures and repairs, the mathematical formulation of the problem is done using probabilistic approach, and differential equations are developed on the basis of Markov birth-death process. These equations are then solved using normalizing conditions so as to determine the steady-state availability of the crystallization unit. The performance of each subsystem of crystallization unit in a sugar plant has also been optimized using genetic algorithm. Thus, the findings of the present paper will be highly useful to the plant management for the timely execution of proper maintenance decisions and, hence, to enhance the system performance

    Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy

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    The relaxation dynamics of the carriers through the defect levels in an epitaxial GaN film grown with an AlN buffer layer on Si has been performed on the femto-picosecond timescale, using ultrafast transient absorption spectroscopy (UFTS). The sample was pumped above and below the band gap and probed with a white light continuum (480-800 nm). A combination of bi and triple exponential decay functions at different probe wavelengths were used to fit the kinetic profile of the carriers in the defect continuum. Based on the UFTS measurements, a model is proposed which explains the dynamics in the shallow traps and deep level defects. Furthermore, to determine the role of the lattice in the relaxation dynamics, the experiment was conducted at a low lattice temperature of 4.2 K. The relaxation constants from the UFTS measurements confirm not only the presence of shallow and deep level defects but also the involvement of phonons in one of the relaxation processes

    Electrochemical properties of Na0.66_{0.66}V4_4O10_{10} nanostructures as cathode material in rechargeable batteries for energy storage applications

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    We report the electrochemical performance of nanostructures of Na0.66_{0.66}V4_4O10_{10} as cathode material for rechargeable batteries. The Rietveld refinement of room temperature x-ray diffraction pattern shows the monoclinic phase with C2/m space group. The cyclic voltammetry curves of prepared half-cells exhibit redox peaks at ~3.1 and 2.6~V, which are due to two-phase transition reaction between V5+/4+^{5+/4+} and can be assigned to the single step deintercalation/intercalation of Na-ion. We observe a good cycling stability with specific discharge capacity (measured vs. Na+^+/Na) between 80 (±\pm2) and 30 (±\pm2) mAh g1^{-1} at a current density 3 and 50~mA g1^{-1}, respectively. The electrochemical performance of Na0.66_{0.66}V4_4O10_{10} electrode was also tested with Li anode, which showed higher capacity, but decay faster than Na. Using density functional theory, we calculate the Na vacancy formation energies; 3.37~eV in the bulk of the material and 2.52~eV on the (100) surface, which underlines the importance of nanostructures.Comment: submitte

    Electronic Raman scattering and photoluminescence from La0.7_{0.7}Sr0.3_{0.3}MnO3_3 exhibiting giant magnetoresistance

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    Raman and Photoluminescence (PL) experiments on correlated metallic La0.7_{0.7}Sr0.3_{0.3}MnO3_{3} have been carried out using different excitation wavelengths as a function of temperature from 15 K to 300 K. Our data suggest a Raman mode centered at 1800 cm1^{-1} and a PL band at 2.2 eV. The intensities of the two peaks decrease with increasing temperature. The Raman mode can be attributed to a plasmon excitation whose frequency and linewidths are consistent with the measured resistivities. The PL involves intersite electronic transitions of the manganese ions.Comment: 10 pages + 4 eps figures, Revtex 3.0, figures available on reques
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