Large-scale BN tunnel barriers for graphene spintronics

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.Comment: 13 pages, 3 figure

Wideband and on-chip excitation for dynamical spin injection into graphene

Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pumping driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pumping into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (Ni$_{80}$Fe$_{20}$) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.Comment: 7 pages, 4 figure

Huge negative differential conductance in Au-H2 molecular nanojunctions

Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies that the excitation of a bound molecule to a large number of energetically similar loosely bound states is responsible for the peaklike structures. Recent experimental studies showing related features are discussed within the framework of our model.Comment: 9 pages, 8 figure

Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex-situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using X-ray photoemission electron microscopy owing to its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.Comment: 7 pages, 6 figure

Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.Comment: 7 pages, 6 figure

Alluvial Architecture and Fluvial Cycles in Quaternary Deposits in a Continental Interior Basin, E Hungary

The thickness of the studied Quaternary alluvial complex, located in the eastern part of the Pannonian Basin System, can exceed 500 m. Based on subsurface facies analysis the following large-scale depositional elements were identified: channel-fill deposits, point bar deposits, alluvial fan (sandy sheet-flood) deposits, floodplain and floodbasin deposits, and thinner sandy–silty beds. They are classified into four types of facies associations, showing a characteristic stacking pattern on the logs. Facies zonation and basin-scale facies mapping of the overall Quaternary sedimentary succession shows that in several areas dominated by stacked, multistorey sandy channel fill sediments, pre-existing superimposed channel belts can be presumed. In the central and deepest part of the basin muddy floodbasin (distal floodplain and wetland) sediments dominate. Between these the largest area represents the floodplain where single channel fill sands are interbedded in the alluvial plain muds. In the eastern part of the basin the well-logs highlight the distal part of an alluvial fan where sandy sheet-flood deposits alternate with floodplain sediments. The recognized facies associations show a vertical pattern, i.e. they form a 40–100 m thick fining-upward fluvial cycle. The most characteristic and even ideal cycle can be observed in the channel belts and in the proximal floodplain zone. Here the basal member of the cycle is made up of multistorey channel fill beds cut into the underlying floodplain deposits. This is overlain by an alternating sandy–muddy succession of channel fill and floodplain deposits forming the intermediate member. The upper member is composed of silty–clayey floodplain deposits with occasional very thin, discrete silty–sandy bodies

Spin-Polarized Electrons in Monolayer MoS2_2

The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb interactions are a key aspect of this spontaneous symmetry breaking. The Bohr radius is so small that even electrons located far apart in phase space interact, facilitating exchange couplings to align the spins